摘要:
PROBLEM TO BE SOLVED: To provide a precursor on which a silicon-containing film can be deposited under low temperature.SOLUTION: A silicon-containing thin film is formed by thermal polymerization of a reaction gas mixture of bis-amino silacyclobutane, and a material gas selected from nitrogen supply gas, oxygen supply gas and their mixtures. The deposition film may be silicon nitride, silicon carbonitride, silicon dioxide or carbon-doped silicon dioxide. These films are useful as a dielectric, a passivation film, a barrier film, a spacer, a liner and/or a stressor in a semiconductor device.
摘要:
PROBLEM TO BE SOLVED: To provide a method for producing bis(alkoxysilylalkyl)fumarate more quickly, at a lower temperature and/or with less byproducts than the conventional methods for producing the bis(alkoxysilylalkyl)fumarate, since the bis(alkoxysilylalkyl)fumarate such as bis(triethoxysilylpropyl)fumarate is useful in tire formulation.SOLUTION: This method for producing a reaction product containing the bis(alkoxysilylorgano)dicarboxylate includes a step (1) of reacting a composition containing (a) a haloorganoalkoxysilane, (b) a dimetal salt of a dicarboxyl functional compound and (c) a phase transfer catalyst containing a bicyclic amidine, a quaternary iminium compound of the bicyclic amidine or their combinations.