摘要:
PURPOSE: To provide a resist having submicron resolution equal or superior to a multilayer resist system by selecting a phenolic polymer composition of the resist from mixtures of phenolic polymers or mixtures of a phenolic polymer(s) and another aromatic polymer(s). CONSTITUTION: In the production of this resist, a wide variety of polymers can be used, however, a phenolic polymer selected from among the following polymers and polymer mixtures is preferably used: (1) a condensation product of phenol, naphthol or any one of their derivatives, whose ring(s) is substituted by an alkyl or aryl group(s) or a halogen atom(s) and an aliphatic or aromatic aldehyde optionally substituted by a halogen atom(s); (2) poly(vinylphenol) having phenol groups each optionally substituted by an alkyl or aryl group(s) or a halogen atom(s); (3) a copolymer of vinylphenol and an ethylenically unsaturated compound; and (4) mixtures of plural polymers selected from the above polymers or mixtures of a polymer(s) selected from the above polymers and another aromatic polymer(s) such as polystyrene or poly(N-vinylcarbazole). Thus, high resolution and a high aspect ratio of the resist can be realized.