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    공급 가스를 완전히 이용하고 완전히 재활용하는 ＣＶＤ-지멘스 모노실란 반응기 공정
    61.
    发明公开
    공급 가스를 완전히 이용하고 완전히 재활용하는 ＣＶＤ-지멘스 모노실란 반응기 공정 无效
    CVD - 西门子单体反应器工艺，完全采用进料气和总回收

    公开(公告)号：KR1020120024502A

    公开(公告)日：2012-03-14

    申请号：KR1020110089156

    申请日：2011-09-02

    申请人： 레반칼 비달 ,  라호티 산제에브

    发明人： 레반칼비달 ,  라호티산제에브

    IPC分类号： C01B33/035 ,  C23C16/24 ,  C30B29/06 ,  C30B28/14

    CPC分类号： C01B3/506 ,  C23C16/24 ,  C23C16/4402 ,  C23C16/4418 ,  C23C16/45593

    摘要： PURPOSE: A chemical vapor deposition(CVD)-Siemens monosilane reactor system is provided to completely use silane and to prevent the generation of non-converted contamination from a reactor for manufacturing polysilicon chuck materials based on the decomposition of gaseous silane precursors. CONSTITUTION: A chemical vapor deposition(CVD)-Siemens monosilane reactor system includes monosilane and hydrogen collecting and recycling system. High temperature reactor gas containing non-reacted monosilane, hydrogen, and impurities in a CVD-Siemens reactor(5) is cooled and refined to generate separate hydrogen flow and separate impurities. The refining process is based on a filtering process, an absorbing process, and a fractional distillation process. The separate hydrogen flow is cooled, and the cooled hydrogen flow is further cooled and refined to generate refined hydrogen flow. The high temperature reactor gas is cooled based on a reverse heat exchanger. Refined monosilane is compressed using a first compressor to be supplied into the CVD-Siemens reactor. The refined hydrogen flow is compressed using a second compressor to be supplied into the CVD-Siemens reactor.

    摘要翻译： 目的：提供化学气相沉积（CVD） - 西门子单硅烷反应器系统，以完全使用硅烷，并防止基于气态硅烷前体分解制造多晶硅卡盘材料的反应堆产生未转化的污染物。 构成：化学气相沉积（CVD） - 西门子单硅烷反应器系统包括甲硅烷和氢气回收和再循环系统。 在CVD西门子反应器（5）中含有未反应的甲硅烷，氢和杂质的高温反应器气体被冷却和精制以产生单独的氢气流和分离的杂质。 精炼过程基于过滤过程，吸收过程和分馏过程。 将单独的氢气流冷却，并将冷却的氢气流进一步冷却和精制以产生精炼的氢气流。 基于反向热交换器冷却高温反应器气体。 精炼的甲硅烷使用第一压缩机进行压缩，供给到CVD西门子反应器中。 使用第二压缩机压缩精制的氢气流以供应到CVD-Siemens反应器中。

    다결정 실리콘 제조 장치
    64.
    发明公开
    다결정 실리콘 제조 장치 有权
    多晶硅制造设备

    公开(公告)号：KR1020090103760A

    公开(公告)日：2009-10-01

    申请号：KR1020090025028

    申请日：2009-03-24

    申请人： 미쓰비시 마테리알 가부시키가이샤

    发明人： 엔도도시히데 ,  데바카리마사유키 ,  이시이도시유키 ,  사카구치마사아키

    IPC分类号： C30B29/06 ,  C01B33/035

    CPC分类号： C01B33/035 ,  C23C16/4418 ,  Y10T117/10 ,  Y10T117/102

    摘要： PURPOSE: A polycrystalline silicon manufacturing apparatus is provided to reduce the penetration hole by forming electrodes at the lower board part of a furnace. CONSTITUTION: The silicon cored bar(4) extended top and bottom is formed in the lower board part(2) of a furnace electrode. The source gas is supplied within a furnace. The silicon cored bar is heated by flowing current in the silicon cored bar from an electrode. The poly-crystal silicon is segregated in the surface of the silicon cored bar by the source gas. A part of electrodes is formed by double electrodes(5B). The double content electrode has a pair of electrode holder. The electrode holder is formed by the insertion state within the penetration hole formed in the lower board part. The cored bar maintenance unit is formed on the top end portion of the electrode holder. The coolant path(40) along which the cooling medium circulates is formed in the electrode holder. The cooling pipe line for in the coolant path is connected to the bottom part of the electrode holder.

    摘要翻译： 目的：提供一种多晶硅制造装置，通过在炉的下板部形成电极来减少贯通孔。 构成：顶部和底部延伸的硅芯棒（4）形成在炉电极的下板部分（2）中。 源气体在炉内供应。 硅芯棒通过硅芯棒中的电流从电极加热。 多晶硅通过源气体在硅芯棒的表面分离。 电极的一部分由双电极（5B）形成。 双层电极具有一对电极座。 电极保持器通过插入状态形成在形成在下板部中的贯通孔内。 芯棒维护单元形成在电极保持器的顶端部分上。 冷却介质循环的冷却剂路径（40）形成在电极保持器中。 用于冷却剂路径的冷却管线连接到电极保持器的底部。

    균일한 셀 구조를 가진 금속 발포체를 제조하기 위한 공정
    65.
    发明公开
    균일한 셀 구조를 가진 금속 발포체를 제조하기 위한 공정 无效
    生产具有均匀细胞结构的金属氧化物的方法

    公开(公告)号：KR1020080030095A

    公开(公告)日：2008-04-03

    申请号：KR1020087003534

    申请日：2006-08-25

    申请人： 베일 인코 리미티드

    发明人： 파세린,블라디미르 ,  슈,준 ,  에텔,빅터

    IPC分类号： C23C28/00

    CPC分类号： H01M4/808 ,  B22F3/1137 ,  B22F2998/00 ,  B29C44/5654 ,  C22C1/08 ,  C23C14/046 ,  C23C14/205 ,  C23C16/045 ,  C23C16/4418 ,  C23C18/1644 ,  C23C18/31 ,  C25D1/08 ,  C25D5/56 ,  H01M4/667

    摘要： A method for producing porous metal plated polymeric foam having uniform pore properties. Polymeric foam buns are horizontally cut along a longitudinal surface thereby lifting off a foam sheet. The sheet is spooled and then reticulated to remove any remaining cell walls and to round off the internal pore struts to enlarge the openings between the adjacent cells. The reticulated foam sheet is unwound and then plated. Slabs may be attached end to end and loop slitted and then reticulated. The resulting plated uniform foam provides a superior substrate for battery plaques and other applications.

    摘要翻译： 一种具有均匀孔性质的多孔金属镀覆聚合泡沫体的制造方法。 聚合物泡沫包子沿着纵向表面水平切割，从而提起泡沫片。 片材被卷绕，然后网状以除去任何剩余的细胞壁并使内孔支柱圆滑以扩大相邻细胞之间的开口。 网状泡沫片材退绕然后电镀。 板可以端对端地连接，并且环切开，然后网状。 所得到的电镀均匀泡沫为电池板和其他应用提供了优异的基材。