公开(公告)号：KR1020120129795A

公开(公告)日：2012-11-28

申请号：KR1020120052391

申请日：2012-05-17

Applicant: 가부시키가이샤 한도오따이 에네루기 켄큐쇼

Inventor： 고에주카주니치 ,  사토유헤이 ,  야마자키순페이

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L21/02554 ,  H01L21/02565 ,  H01L29/04 ,  H01L29/7869

Abstract: PURPOSE: A method of manufacturing a semiconductor device is provided to implement stable electrical characteristic by forming an oxide aluminum film on a crystalline oxide semiconductor film to prevent oxygen from being discharged from the crystalline oxide semiconductor layer in a heating process. CONSTITUTION: An amorphous oxide semiconductor film(491) is formed between an insulating layer(407) and an oxide aluminum film. A heating process is performed on the amorphous oxide semiconductor film to form a crystalline oxide semiconductor film(403). The crystalline oxide semiconductor is doped with oxygen to form the amorphous oxide semiconductor film containing excessive oxygen.

Abstract translation: 目的：提供一种制造半导体器件的方法以通过在结晶氧化物半导体膜上形成氧化物铝膜来实现稳定的电气特性，以防止氧气在加热过程中从结晶氧化物半导体层排出。 构成：在绝缘层（407）和氧化铝膜之间形成无定形氧化物半导体膜（491）。 对非晶氧化物半导体膜进行加热处理，以形成结晶氧化物半导体膜（403）。 结晶氧化物半导体掺杂有氧以形成含有过量氧的无定形氧化物半导体膜。

公开(公告)号：KR101980515B1

公开(公告)日：2019-08-28

申请号：KR1020120052391

申请日：2012-05-17

Applicant: 가부시키가이샤 한도오따이 에네루기 켄큐쇼

Inventor： 고에주카주니치 ,  사토유헤이 ,  야마자키순페이

IPC: H01L29/786 ,  H01L21/336