公开(公告)号：KR1020030054255A

公开(公告)日：2003-07-02

申请号：KR1020010084391

申请日：2001-12-24

申请人： 박수길

发明人： 박수길 ,  아키라후지시마 ,  야스아키에이나가

IPC分类号： C25B1/04 ,  C25B1/30 ,  C25B11/12

CPC分类号： Y02E60/366

摘要： PURPOSE: An electrochemical ozone generator is provided which improves stability and permanency of electrodes (the anode) during generation of ozone gas due to electrolysis of water by using boron-doped conductive diamond as the electrodes. CONSTITUTION: The electrochemical ozone generator using boron-doped conducting diamond electrode includes an electrolyzer(30) which is sealed, and on which a circulation pipe(37) is installed so that electrolyte(35) inside the electrolyzer(30) is circulated; a circulation pump(31) for circulating the electrolyte(35) through the circulation pipe(37); electrolytic cells(33) in which the electrolyte(35) circulated by the circulation pump(31) is electrolyzed by a power source impressed from a power supply(32) as the electrolyte(35) is passing through electrodes(34); a generated gas exhaust pipe for exhausting the ozone gas to measure a generated amount of ozone gas introduced into the electrolyzer(30) after being generated by electrolysis; and a cooling unit for cooling the electrolyzer(30) and electrolytic cells(33).

摘要翻译： 目的：提供一种电化学臭氧发生器，其通过使用硼掺杂的导电金刚石作为电极，由于电解水而在产生臭氧气体期间提高电极（阳极）的稳定性和永久性。 构成：使用硼掺杂的导电金刚石电极的电化学臭氧发生器包括密封的电解器（30），并且在其上安装循环管（37），使得电解槽（30）内的电解质（35）循环; 用于使电解质（35）循环通过循环管（37）的循环泵（31）; 其中由循环泵（31）循环的电解质（35）的电解槽（33）由作为电解质（35）的电源（32）照射的电源电解通过电极（34）; 产生的排气管，用于排出臭氧气体，以测量通过电解产生的引入电解槽（30）的臭氧气体的产生量; 以及用于冷却电解器（30）和电解槽（33）的冷却单元。

公开(公告)号：KR100439946B1

公开(公告)日：2004-07-12

申请号：KR1020010084391

申请日：2001-12-24

申请人： 박수길

发明人： 박수길 ,  아키라후지시마 ,  야스아키에이나가

IPC分类号： C25B1/04 ,  C25B1/30 ,  C25B11/12

CPC分类号： Y02E60/366

摘要： PURPOSE: An electrochemical ozone generator is provided which improves stability and permanency of electrodes (the anode) during generation of ozone gas due to electrolysis of water by using boron-doped conductive diamond as the electrodes. CONSTITUTION: The electrochemical ozone generator using boron-doped conducting diamond electrode includes an electrolyzer(30) which is sealed, and on which a circulation pipe(37) is installed so that electrolyte(35) inside the electrolyzer(30) is circulated; a circulation pump(31) for circulating the electrolyte(35) through the circulation pipe(37); electrolytic cells(33) in which the electrolyte(35) circulated by the circulation pump(31) is electrolyzed by a power source impressed from a power supply(32) as the electrolyte(35) is passing through electrodes(34); a generated gas exhaust pipe for exhausting the ozone gas to measure a generated amount of ozone gas introduced into the electrolyzer(30) after being generated by electrolysis; and a cooling unit for cooling the electrolyzer(30) and electrolytic cells(33).

摘要翻译： 目的：提供一种电化学臭氧发生器，其通过使用硼掺杂导电金刚石作为电极来电解水，从而提高臭氧气体产生过程中电极（阳极）的稳定性和永久性。 构成：使用掺硼导电金刚石电极的电化学臭氧发生器包括一个密封的电解槽（30），并在其上安装一个循环管（37），使电解槽（30）内的电解液（35）循环; 循环泵（31），用于使电解液（35）循环通过循环管（37）; 随着电解质（35）通过电极（34），由循环泵（31）循环的电解质（35）通过从电源（32）施加的电源电解电解槽（33）; 产生的气体排出管，用于排出臭氧气体以测量通过电解产生之后引入到电解槽（30）中的臭氧气体的产生量; 以及用于冷却电解槽（30）和电解槽（33）的冷却单元。

公开(公告)号：KR1020030055595A

公开(公告)日：2003-07-04

申请号：KR1020010085610

申请日：2001-12-27

申请人： 박수길

发明人： 박수길 ,  아키라후지시마 ,  야스아키에이나가

IPC分类号： C23C16/27

CPC分类号： C23C16/274 ,  C23C16/279

摘要： PURPOSE: A manufacturing method of large crystalline pure diamond thin film having large area by using microwave plasma CVD is provided. CONSTITUTION: In a method for forming a diamond thin film(22) on substrate using microwave plasma CVD, the manufacturing method of large crystalline diamond thin film by microwave plasma CVD comprises the process of impressing power ranging from 1,000 to 5,000 W to microwave in the state that substrates(20) are stacked so that the surface of the substrates(20) is maintained to the temperature range of 750 to 1,100 deg.C, wherein the surface of the substrate(20) is preferably maintained to the temperature range of 750 to 1,100 deg.C when forming the diamond thin film(22) by performing microwave plasma CVD treatment in the state that the substrates(20) are stacked, diamond crystal is not grown well in case that temperature of the surface of the substrates(20) is lower than 750 deg.C while growing of the diamond crystal is impossible due to melting of substrate Si in case that temperature of the surface of the substrates(20) is higher than 1,100 deg.C, output of microwave applied when forming the diamond thin film(22) is preferably in the range of 1,000 to 5,000 W, and growing of the diamond crystal is very unstable as formation of hydrogen plasma is not complete in case that output of microwave is less than 1,000 W while apparatus is overloaded due to output of microwave more than required in case that output of microwave exceeds 5,000 W.

摘要翻译： 目的：提供通过使用微波等离子体CVD的具有大面积的大结晶纯金刚石薄膜的制造方法。 构成：在使用微波等离子体CVD的衬底上形成金刚石薄膜（22）的方法中，通过微波等离子体CVD的大型晶体金刚石薄膜的制造方法包括在1000〜5000W的功率范围内向微波施加 表示基板（20）堆叠成使得基板（20）的表面保持在750〜1100℃的温度范围，其中基板（20）的表面优选保持在750的温度范围 在层叠基板（20）的状态下通过进行微波等离子体CVD处理来形成金刚石薄膜（22）时，金刚石晶体在基板（20）的表面的温度 ）低于750摄氏度，而当衬底（20）的表面的温度高于1100度时，由于衬底Si的熔化，金刚石晶体的生长是不可能的，当用于 金刚石薄膜（22）优选在1,000至5,000W的范围内，并且由于在输出微波小于1,000W的情况下氢气等离子体的形成不完全，所以金刚石晶体的生长是非常不稳定的，而装置是 在微波输出超过5000W的情况下，由于微波的输出而超出所需的超载。

公开(公告)号：KR100459531B1

公开(公告)日：2004-12-04

申请号：KR1020010085610

申请日：2001-12-27

申请人： 박수길

发明人： 박수길 ,  아키라후지시마 ,  야스아키에이나가

IPC分类号： C23C16/27

摘要： PURPOSE: A manufacturing method of large crystalline pure diamond thin film having large area by using microwave plasma CVD is provided. CONSTITUTION: In a method for forming a diamond thin film(22) on substrate using microwave plasma CVD, the manufacturing method of large crystalline diamond thin film by microwave plasma CVD comprises the process of impressing power ranging from 1,000 to 5,000 W to microwave in the state that substrates(20) are stacked so that the surface of the substrates(20) is maintained to the temperature range of 750 to 1,100 deg.C, wherein the surface of the substrate(20) is preferably maintained to the temperature range of 750 to 1,100 deg.C when forming the diamond thin film(22) by performing microwave plasma CVD treatment in the state that the substrates(20) are stacked, diamond crystal is not grown well in case that temperature of the surface of the substrates(20) is lower than 750 deg.C while growing of the diamond crystal is impossible due to melting of substrate Si in case that temperature of the surface of the substrates(20) is higher than 1,100 deg.C, output of microwave applied when forming the diamond thin film(22) is preferably in the range of 1,000 to 5,000 W, and growing of the diamond crystal is very unstable as formation of hydrogen plasma is not complete in case that output of microwave is less than 1,000 W while apparatus is overloaded due to output of microwave more than required in case that output of microwave exceeds 5,000 W.

摘要翻译： 目的：提供一种利用微波等离子体CVD制造大面积大晶体纯金刚石薄膜的方法。 本发明公开了一种利用微波等离子体CVD在衬底上形成金刚石薄膜（22）的方法，利用微波等离子体CVD制造大晶体金刚石薄膜的方法包括在1000-5000W范围内的微波功率 表示将基板（20）层叠，使基板（20）的表面保持在750〜1100℃的温度范围内，基板（20）的表面优选维持在750 在将基板20层叠的状态下进行微波等离子体CVD处理而形成金刚石薄膜22时的温度为1100℃时，在基板20的表面的温度为20℃的情况下， ）低于750℃，而在衬底（20）表面温度高于1100℃的情况下，由于衬底Si的熔化，不可能生长金刚石晶体， （22）的厚度优选在1,000至5,000W的范围内，并且在微波输出小于1,000W的情况下由于氢等离子体的形成不完全而金刚石晶体的生长非常不稳定，而设备是 在微波输出超过5,000W的情况下，由于微波输出超过所需要的而过载。