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    레이저-기반 웨이퍼 가공 동안에 처리량을 증가시키기 위해 파라미터를 적응시키는 시스템 및 방법
    1.
    发明公开
    레이저-기반 웨이퍼 가공 동안에 처리량을 증가시키기 위해 파라미터를 적응시키는 시스템 및 방법 有权
    用于在基于激光的波浪加工中适应参数以增加通量的系统和方法

    公开(公告)号：KR1020100043147A

    公开(公告)日：2010-04-28

    申请号：KR1020097026925

    申请日：2007-11-29

    Applicant: 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드

    Inventor： 브룰랜드켈리제이. ,  반데르기에센클린트 ,  에잇젠두아네

    IPC: H01L21/268 ,  H01L21/78 ,  H01L21/02

    CPC classification number: B23K26/0853 ,  B23K26/042 ,  B23K26/082 ,  B23K26/351 ,  B23K2201/40 ,  G11C17/143 ,  G11C29/006 ,  G11C29/028 ,  G11C29/56 ,  H01L21/76894

    Abstract: Systems and methods automatically modify a laser-based system for processing target specimens such as semiconductor wafers. In one embodiment, the laser-based system detects a trigger associated with a processing model. The processing model corresponds to a set of wafers. In response to the trigger, the system automatically adjusts one or more system parameters based on the processing model. The system then uses the modified system parameters to selectively irradiate structures on or within at least one wafer in the set of wafers. In one embodiment, the trigger includes variations in a thermal state related to a motion stage. In response to the variations in the thermal state, the system operates the motion stage in a series of movements until a thermal equilibrium threshold is reached. The sequence of movements may, for example, simulate movements used to process a particular wafer.

    Abstract translation: 系统和方法自动修改基于激光的系统，以处理目标样品，如半导体晶圆。 在一个实施例中，基于激光的系统检测与处理模型相关联的触发。 处理模型对应于一组晶片。 响应于触发，系统根据处理模型自动调整一个或多个系统参数。 然后，系统使用修改的系统参数来选择性地照射在该组晶片中的至少一个晶片上或其内的结构。 在一个实施例中，触发器包括与运动级相关的热状态的变化。 响应于热状态的变化，系统以一系列运动运行运动阶段，直到达到热平衡阈值。 运动顺序可以例如模拟用于处理特定晶片的运动。

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