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公开(公告)号：KR1020100001559A
公开(公告)日：2010-01-06
申请号：KR1020080061513
申请日：2008-06-27
申请人： 한국과학기술연구원
IPC分类号： H01L21/20
CPC分类号： C30B29/16 , C23C16/407 , C30B25/02 , C30B28/12
摘要： PURPOSE: A method for a thin film growth is provided to improve the mobility of a carrier and a light scattering effect by improving a surface particle size and surface roughness of a thin film. CONSTITUTION: In a device, nuclei of the crystal grains having the various crystal growth direction are formed on the top of a substrate. First crystal particles having a first crystal growth direction(100) are preferentially grown up in order to form a first texture. Second crystal particles having a second crystal growth direction(111) are preferentially grown up in order to form a second texture. The area of surface of the second crystal particle is bigger than that of the first crystal particle.
摘要翻译： 目的：通过提高薄膜的表面粒径和表面粗糙度，提供薄膜生长方法，以提高载流子的迁移率和光散射效果。 构成：在器件中，在衬底的顶部形成具有各种晶体生长方向的晶粒的核。 优先生长具有第一晶体生长方向（100）的第一晶体颗粒以形成第一纹理。 优选地生长具有第二晶体生长方向（111）的第二晶体颗粒以形成第二结构。 第二晶体颗粒的表面面积大于第一晶体颗粒的面积。
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公开(公告)号：KR1020090102354A
公开(公告)日：2009-09-30
申请号：KR1020080027741
申请日：2008-03-26
申请人： 한국과학기술연구원
IPC分类号： G11B7/24073 , G11B7/243
CPC分类号： G11B7/252 , G11B7/24065 , G11B7/2531 , G11B7/2533 , G11B7/259 , G11B7/266 , G11B2007/24304 , G11B2007/24306 , G11B2007/2432
摘要： PURPOSE: An optical recording medium having a super-resolution structure for improvement of reproduction stability and low band noise characteristic are provided to prevent degradation of reproduction characteristic resulting from the diffusion of gas which forms a bubble recording mark. CONSTITUTION: An optical recording medium having a super-resolution structure comprises a plurality of layers formed on the top of a substrate, including a recorded layer(308) and a super-resolution layer(318). The recorded layer contains a material whose decomposition temperature is higher than regeneration temperature and does not form a bubble recording mark in recording. The super-resolution layer is composed of chalcogenide semiconductor material containing one or more selected from nitrogen(N), oxygen(O), carbon(C) and boron(B).
摘要翻译： 目的：提供具有用于提高再现稳定性和低频带噪声特性的超分辨率结构的光记录介质，以防止由形成气泡记录标记的气体的扩散引起的再现特性的劣化。 构成：具有超分辨率结构的光学记录介质包括形成在衬底的顶部上的多个层，包括记录层（308）和超分辨率层（318）。 记录层包含分解温度高于再生温度并且在记录中不形成气泡记录标记的材料。 超分辨率层由含有选自氮（N），氧（O），碳（C）和硼（B））中的一种或多种的硫族化物半导体材料组成。
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公开(公告)号：KR1020080051061A
公开(公告)日：2008-06-10
申请号：KR1020070122771
申请日：2007-11-29
申请人： 한국과학기술연구원
IPC分类号： G11B7/2433 , G11B7/253
CPC分类号： G11B7/24 , G02F1/3523 , G11B7/252 , Y10T428/21 , Y10T428/26
摘要： A super-resolution material and a high density optical information storage medium using the same are provided to include at least one selected from a group consisting of a semiconductor material, nitrogen, oxygen, carbon, and boron. A super-resolution material for playing and recording optical information includes more than one selected from a group consisting of a semiconductor material by which light is absorbed in a wavelength range of incident light so that light transmission is increased according to heat, nitrogen, oxygen, carbon, and boron.
摘要翻译： 提供超分辨率材料和使用其的高分辨率光学信息存储介质以包括从由半导体材料，氮，氧，碳和硼组成的组中选择的至少一种。 用于播放和记录光学信息的超分辨率材料包括多个选自由在入射光的波长范围内吸收光的半导体材料组成的组，以使得透光率根据热，氮，氧， 碳和硼。
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公开(公告)号：KR1020130039933A
公开(公告)日：2013-04-23
申请号：KR1020110104609
申请日：2011-10-13
申请人： 한국과학기술연구원
IPC分类号： H04N9/07 , H01L27/146 , H04N5/335
CPC分类号： H01L27/14647
摘要： PURPOSE: A color image sensor is provided to reduce the size of a pixel by composing the pixel with one optical diode. CONSTITUTION: A photosensitive device(100) includes a lower electrode, an upper electrode, and a chalcogenide material. The chalcogenide material is located between the lower electrode and the upper electrode. Image sensing circuits(200,300,410,420,510,520) measure the strength or wavelength of incident light based on an electric property value generated in the photosensitive device.
摘要翻译： 目的：提供彩色图像传感器，通过用一个光二极管组成像素来减小像素的尺寸。 构成：感光装置（100）包括下电极，上电极和硫族化物材料。 硫族化物材料位于下电极和上电极之间。 图像感测电路（200,300,410,420,510,520）基于在感光装置中产生的电特性值来测量入射光的强度或波长。
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公开(公告)号：KR1020110094294A
公开(公告)日：2011-08-23
申请号：KR1020117012409
申请日：2008-11-19
申请人： 한국과학기술연구원
IPC分类号： H01L41/113 , H01L41/08
CPC分类号： F03G7/065
摘要： PURPOSE: A micro-actuator with large displacement and high operation speed and a manufacturing method thereof are provided to prevent the chemical reaction between a substrate and phase change films by forming a buffer between the substrate and phase change films. CONSTITUTION: In a micro-actuator with large displacement and high operation speed and a manufacturing method thereof, a substrate(10) is prepared. A buffer film is deposited in a substrate through a sputtering and evaporation deposition. A phase change film(30) is deposited the buffer layer(20) by using sputtering or the evaporation deposition on A protective insulating film(40) is evaporated on the phase change film. A current pulse supply unit supplies thermal energy to induce the phase change of the phase change film.
摘要翻译： 目的：提供一种具有大位移和高运行速度的微致动器及其制造方法，以通过在基板和相变膜之间形成缓冲器来防止基板与相变膜之间的化学反应。 构成：在具有大位移和高操作速度的微型致动器及其制造方法中，制备基板（10）。 通过溅射和蒸发沉积在衬底中沉积缓冲膜。 通过使用溅射法将缓冲层（20）沉积在相变膜（30）上，或者将保护绝缘膜（40）上的蒸发沉积蒸发在相变膜上。 电流脉冲供应单元提供热能以引起相变膜的相变。
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公开(公告)号：KR100928197B1
公开(公告)日：2009-11-25
申请号：KR1020070122771
申请日：2007-11-29
申请人： 한국과학기술연구원
IPC分类号： G11B7/2433 , G11B7/253
CPC分类号： G11B7/24 , G02F1/3523 , G11B7/252 , Y10T428/21 , Y10T428/26
摘要： 본 발명은 고밀도 광 정보 재생 및 기록용 초해상 재료에 관한 것으로서, 입사광의 파장 영역에서 광의 흡수 및 가열에 따라 광 투과도가 증가하는 특성을 갖는 반도체 물질, 및 질소, 산소, 탄소 및 붕소 중에서 선택되는 1종 이상의 원소를 포함하는 본 발명에 따른 초해상 재료는 작은 결정립의 안정한 미세조직을 가지며 열전도도가 작아서 레이저 파워의 감소와 함께 높은 신호대 잡음비, 그리고 반복 재생 또는 기록에 대한 내구특성의 향상이 기대되어 하나 또는 그 이상의 정보저장층을 갖는 재생전용형 또는 한번쓰기형 또는 되쓰기형 광 정보저장매체에 효과적으로 적용할 수 있다.
광디스크, 초해상, 반도체, 칼코지나이드(chalcogenide), 열전도도摘要翻译： 一种用于记录和再现光学信息的超分辨率材料，包括半导体材料，其具有随入射辐射强度增加而增加的透射率，以及一种或多种选自氮（N），氧（O） ），碳（C）和硼（B）。
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公开(公告)号：KR101791154B1
公开(公告)日：2017-10-30
申请号：KR1020160032520
申请日：2016-03-18
申请人： 한국과학기술연구원
IPC分类号： H04N5/369 , H01L27/146 , G02B5/22 , H04N9/73
CPC分类号： H01L31/0324 , H01L27/14645 , H01L27/14647 , H01L31/032 , H01L31/109 , H01L31/1129
摘要： 실시예들은기판, 기판상에형성된제1 색상을위한제1 칼코지나이드물질층, 상기제1 칼코지나이드물질층상에형성된제2 색상을위한제2 칼코지나이드물질층및 상기제2 칼코지나이드물질층상에형성된제3 색상을위한제3 칼코지나이드물질층을포함하는칼코지나이드물질기반의필터리스컬러이미지센서에관련된다.
摘要翻译： 实例包括第一刀砷化浩二材料层，用于第二颜色的第一第二刀浩二砷化材料层是由剑浩二砷化材料层和所述第二刀曲为形成在基板上的第一颜色，所述衬底形成 并且在非胆碱能材料层上形成用于第三颜色的第三硫属化物材料层。
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公开(公告)号：KR101436924B1
公开(公告)日：2014-09-03
申请号：KR1020130039961
申请日：2013-04-11
申请人： 한국과학기술연구원
IPC分类号： H01L45/00
CPC分类号： H01L45/141 , H01L45/143 , H01L45/145 , H01L45/1608
摘要： According to the present invention, provided is a method for manufacturing an ovonic threshold switching device with an N-doped chalcogenide material and the ovonic threshold switching device manufactured thereby. The method for manufacturing the ovonic threshold switching device with the N-doped chalcogenide material includes the steps of forming an insulation layer on a substrate; forming a first electrode on the insulation layer; forming a chalcogenide material including N, Ge, and Se on the first electrode; and forming a second electrode on the chalcogenide material.
摘要翻译： 根据本发明，提供一种用于制造具有N掺杂的硫族化物材料和由此制造的超声阈值开关器件的超声阈值开关器件的方法。 制造具有N掺杂硫族化物材料的超声阈值开关器件的方法包括在衬底上形成绝缘层的步骤; 在所述绝缘层上形成第一电极; 在所述第一电极上形成包括N，Ge和Se的硫族化物材料; 并在硫族化物材料上形成第二电极。
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公开(公告)号：KR1020100097715A
公开(公告)日：2010-09-03
申请号：KR1020107014004
申请日：2007-12-28
申请人： 한국과학기술연구원
CPC分类号： G11C13/0069 , G11C13/0004 , G11C13/0033 , G11C16/3431 , G11C16/349 , G11C2013/0073
摘要： PURPOSE: A phase change memory device and a programming method thereof are provided to increase durability by applying a reverse recovery pulse. CONSTITUTION: A phase change memory array(24) comprises a plurality of phase change memory devices. A pulse generator(22) comprises a write current pulse, an erase current pulse, and a reverse recovery current pulse for the phase change memory device of a phase change memory array. The direction of the reverse recovery pulse is opposite to the direction of the write current pulse and the erase current pulse of the phase memory device. The pulse generator includes a bidirectional pulse generator which flows a current in both directions of the phase change memory device.
摘要翻译： 目的：提供相变存储器件及其编程方法，以通过施加反向恢复脉冲来提高耐久性。 构成：相变存储器阵列（24）包括多个相变存储器件。 脉冲发生器（22）包括用于相变存储器阵列的相变存储器件的写入电流脉冲，擦除电流脉冲和反向恢复电流脉冲。 反向恢复脉冲的方向与相位存储器件的写入电流脉冲和擦除电流脉冲的方向相反。 脉冲发生器包括在相变存储器件的两个方向上流过电流的双向脉冲发生器。
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