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公开(公告)号：KR101439263B1
公开(公告)日：2014-09-11
申请号：KR1020130142877
申请日：2013-11-22
Applicant: 한국광기술원
IPC: H01L31/09
CPC classification number: H01L31/09 , G01J5/0853 , G01J5/20 , H01L31/0392 , H01L31/18
Abstract: The present invention relates to a method for manufacturing an infrared detection thin film for a microbolometer. The purpose of the present invention is to provide a method for manufacturing an infrared detection thin film for a microbolometer which can manufacture a thin film with excellent reproducibility and large resistance variation (TCR) according to the temperature of a microbolometer infrared detection device. To achieve this purpose, the present invention includes a process (a) of depositing an insulating layer on a Si substrate; a process (b) of depositing a multilayered thin film by alternating a vanadium oxide (Vox) and zinc oxide (ZnO) on the insulating layer; a process (c) of performing a thermal process on the deposited multilayered thin film.
Abstract translation: 本发明涉及一种用于制造微热辐射计的红外检测薄膜的方法。 本发明的目的是提供一种用于制造微热辐射计的红外检测薄膜的方法，其可以根据微热辐射计红外线检测装置的温度制造具有优异的再现性和大的电阻变化（TCR）的薄膜。 为了实现该目的，本发明包括在Si衬底上沉积绝缘层的工艺（a）; 通过在绝缘层上交替氧化钒（Vox）和氧化锌（ZnO）来沉积多层薄膜的方法（b）; 对沉积的多层薄膜进行热处理的工艺（c）。
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公开(公告)号：KR101358644B1
公开(公告)日：2014-02-10
申请号：KR1020110144322
申请日：2011-12-28
Applicant: 한국광기술원
Abstract: 저가의 Si 기판 위에 패턴된 SiO
2 또는 SiNx 유전체 덮개층을 형성한 구조를 준비하고 그 위에 3족 원소가 두 개 이상인 III-V 물질(In
x Ga
1-x As
z P
1-z , In
x Ga
1-x As
z P
1-z , In
x Al
1-x As
z P
1-z , In
x Ga
y Al
1-xy As
z P
1-z , In
x Ga
y Al
1-xy As
z P
1-z ) SiO
2 덮개 층 폭(W
sio2 )과 덮개층이 없이 개방되어 있는 부분의 폭 (W
hole )의 차이에 의하여 에너지 밴드갭이 다른 나노 와이어를 성장시키는 방법 방법이 제공된다. 상기 나노 와이어 성장 방법은 기판을 준비하는 단계; 상기 기판 위에 나노 와이어 성장용 층을 형성하는 단계; 나노 임프린트 리소그래피 방식에 의해 다수의 돌기를 갖는 몰드로 상기 나노 와이어 성장용 층을 임프린팅하여 상기 기판이 노출되도록 상기 다수의 돌기에 각각 대응하여 다수의 홀이 형성된 제1 영역 및 상기 제1 영역의 폭(W
hole )과 다른 폭(W
sio2 )을 갖고 상기 홀이 형성되지 않은 제2 영역으로 구분된 스프라이프 형태를 갖는 패턴을 형성하는 단계; 상기 몰드를 상기 기판으로부터 분리하는 단계 및 III - V족 화합물을 상기 패턴의 개방 비율(W
sio2 /W
hole )을 0 ~ 5 사이에서 선택에 따라 상기 패턴의 다수의 홀을 통하여 노출된 상기 기판의 표면에 제공하여 파장이 변하는 나노 와이어를 성장시키는 단계를 포함한다.-
公开(公告)号：KR1020140007095A
公开(公告)日：2014-01-17
申请号：KR1020120072590
申请日：2012-07-04
Applicant: 한국광기술원
IPC: H01L31/18 , H01L31/042 , H01L31/0749
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/18 , H01L31/042 , H01L31/0749
Abstract: The present invention relates to a method for fabricating an absorber layer in a CIS solar sell system using an organic metal Se source. More particularly, the present invention relates to a method for fabricating an absorber layer in a CIS solar sell system including a selenization process using the vapor pressure of the organic metal Se source without using a carrier gas. The present invention is to save the cost of equipment installation by simplifying a carrier gas generation apparatus and to safely and cheaply provide a high quality CIS absorption layer including the Se content of 50% or more in an absorption thin film by easily controlling reaction. [Reference numerals] (AA) MFC or pressure control valve; (BB) Se source; (CC,DD,EE,FF) Valve; (GG) Quartz window; (HH) Cu-III group metal/Mo/glass substrate; (II) Heater; (JJ) Heating chamber; (KK) Selenization chamber; (LL) Liquid selenium source; (MM) Water with controlled temperature; (NN) Thermostat
Abstract translation: 本发明涉及一种使用有机金属硒源的CIS太阳能销售系统中制造吸收层的方法。 更具体地说，本发明涉及一种在CIS太阳能销售系统中制造吸收层的方法，其包括使用有机金属硒源的蒸气压而不使用载气的硒化工艺。 本发明通过简化载气生成装置来节省设备安装成本，并且通过容易地控制反应，在吸收薄膜中安全廉价地提供包含Se含量为50％以上的高品质CIS吸收层。 （标号）（AA）MFC或压力控制阀; （BB）硒源; （CC，DD，EE，FF）阀门; （GG）石英窗; （HH）Cu-III族金属/ Mo /玻璃基板; （二）加热器 （JJ）加热室; （KK）硒化室; （LL）液体硒源; （MM）控制温度的水; （NN）恒温器
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公开(公告)号：KR1020130038468A
公开(公告)日：2013-04-18
申请号：KR1020110102840
申请日：2011-10-10
Applicant: 한국광기술원
IPC: G01J5/20 , H01L31/101
Abstract: PURPOSE: A window integrated non-cooling type infrared detector and a manufacturing device thereof are provided to manufacture the infrared detector by welding a window cap with an element wafer, thereby improving productivity and a product yield. CONSTITUTION: An infrared detector comprises a substrate(110), a sensor array(120), a window cap(130), a non-reflection coating film(131), a getter(132), and an electrode unit(140). A signal obtaining circuit is integrated on the substrate. The sensor array is composed of two or more infrared detection elements, which are electrically connected to the signal collecting circuit. The non-reflection coating film is coated on both sides of the window cap. The getter is arranged on the inner surface of the window cap to absorb gas. The electrode unit is arranged on the substrate, thereby electrically connected to the signal obtaining circuit.
Abstract translation: 目的：提供一种集成了非冷却型红外线检测器的窗口及其制造装置，通过将窗口盖与元件晶片进行焊接来制造红外线检测器，从而提高生产率和产品产量。 构成：红外检测器包括基底（110），传感器阵列（120），窗口盖（130），非反射涂膜（131），吸气剂（132）和电极单元（140）。 信号获取电路集成在基板上。 传感器阵列由两个或更多个红外线检测元件组成，它们与信号收集电路电连接。 非反射涂膜涂覆在窗盖的两侧。 吸气剂布置在窗口的内表面上以吸收气体。 电极单元布置在基板上，从而电连接到信号获取电路。
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Patent Agency Ranking
公开(公告)号：KR1020120111366A
公开(公告)日：2012-10-10
申请号：KR1020110029798
申请日：2011-03-31
Applicant: 한국광기술원
IPC: H01L31/046 , H01L31/0216
CPC classification number: Y02E10/50 , H01L31/046 , H01L31/0216
Abstract: PURPOSE: A method for manufacturing a solar cell module using a thin aluminum film is provided to prevent the gap between a rear electrode and a CIS absorption layer by adopting a process adding a metal thin film between the rear electrode and the light absorption precursor layer. CONSTITUTION: A rear electrode(120) is formed on a substrate(110). The rear electrode is divided through P1 scribing. A metal thin film containing one of a I group element, a III group element and a VI group element is formed on the rear electrode. A light absorption precursor layer containing one of theI group element and the III group element is formed on the metal thin film. A buffer layer(140) is formed on a light absorption layer(130).
Abstract translation: 目的：提供一种使用薄铝膜制造太阳能电池模块的方法，通过采用在后电极和光吸收前体层之间添加金属薄膜的工艺来防止后电极和CIS吸收层之间的间隙。 构成：在基板（110）上形成后电极（120）。 后电极通过P1划线分开。 在后电极上形成含有I族元素，III族元素和VI族元素中的一种的金属薄膜。 在金属薄膜上形成含有I族元素和III族元素之一的光吸收前体层。 缓冲层（140）形成在光吸收层（130）上。
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公开(公告)号：KR1020100114622A
公开(公告)日：2010-10-26
申请号：KR1020090033085
申请日：2009-04-16
Applicant: 한국광기술원
Abstract: PURPOSE: A surface plasmon resonance sensor and a measuring method for feature using the same are provided to accurately detect various bio-information using small sweat and breath. CONSTITUTION: A surface plasmon resonance sensor comprises a base substrate, a metal layer(130) and a photonic crystal layer. The metal layer is formed on the base substrate. The photonic crystal layer has defects on a metal thin-film form. The photonic crystal layer is a metal light crystalline layer. The photonic crystal layer is a dielectric photonic crystal layer. A dielectric photonic crystal layer with defects is formed on a metal light crystalline layer(140).
Abstract translation: 目的：提供表面等离子体共振传感器和使用该表面等离子体共振传感器的特征的测量方法，以使用小的汗水和呼吸精确地检测各种生物信息。 构成：表面等离子体共振传感器包括基底，金属层（130）和光子晶体层。 金属层形成在基底基板上。 光子晶体层在金属薄膜形式上具有缺陷。 光子晶体层是金属光结晶层。 光子晶体层是介质光子晶体层。 在金属光结晶层（140）上形成具有缺陷的介电光子晶体层。
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公开(公告)号：KR1020100065707A
公开(公告)日：2010-06-17
申请号：KR1020080124179
申请日：2008-12-08
Applicant: 한국광기술원
IPC: H01S5/12
CPC classification number: H01S5/1231 , G02B5/1847 , H01L21/203 , H01S5/1228
Abstract: PURPOSE: A multi-region semiconductor laser and a manufacturing method thereof are provided to generate diffraction grids of two DFB(Distributed Feedback) regions at a time by using a mask for the selective region growth. CONSTITUTION: A buffer layer(120), a diffraction lattice layer(130), a cap layer, and a photoresist layer are successively laminated on the top of a substrate. The photoresist layer is etched with a patterning procedure. The cap layer and the diffraction lattice layer are etched by using the etched photoresist layer as a mask. The photoresist layer is removed. Masks(162,164) for the selective region growth are formed with the etched cap layer, the diffraction lattice layer, and a part of an exposed buffer layer. An active layer is formed on the top of the mask for the selective region growth, the cap layer, and the exposed buffer layer.
Abstract translation: 目的：提供一种多区域半导体激光器及其制造方法，通过使用用于选择性区域生长的掩模，一次产生两个DFB（分布式反馈）区域的衍射栅格。 构成：缓冲层（120），衍射晶格层（130），覆盖层和光致抗蚀剂层依次层压在基板的顶部上。 用图案化方法蚀刻光致抗蚀剂层。 通过使用蚀刻的光致抗蚀剂层作为掩模来蚀刻覆盖层和衍射晶格层。 去除光致抗蚀剂层。 用蚀刻的盖层，衍射晶格层和暴露的缓冲层的一部分形成用于选择性区域生长的掩模（162,164）。 在掩模的顶部上形成有源层用于选择性区域生长，盖层和暴露的缓冲层。
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公开(公告)号：KR1020100058994A
公开(公告)日：2010-06-04
申请号：KR1020080117599
申请日：2008-11-25
Applicant: 한국광기술원
IPC: H01L51/50
CPC classification number: H01L51/5056 , H01L21/56 , H01L51/0052 , H01L51/5072 , H01L51/5088 , H01L51/5092 , H01L2224/40091
Abstract: PURPOSE: A passive organic light-emitting diode and a manufacturing method thereof are provided to prevent the oxidation and contamination of the organic layer by forming an organic layer within the oxidation prevention layer. CONSTITUTION: An oxidation prevention layer(103) is formed on a positive electrode layer(102). At least more than one groove is formed on the oxidation prevention layer so that the positive electrode layer can be exposed. An organic layer(110) is formed inside the groove. The organic layer is formed in a structure in which a hole transport layer(111), a light-emitting layer(112), and an electron transport layer(113) are sequentially laminated.
Abstract translation: 目的：提供一种无源有机发光二极管及其制造方法，以通过在氧化防止层内形成有机层来防止有机层的氧化和污染。 构成：在正极层（102）上形成氧化防止层（103）。 在氧化防止层上形成至少一个以上的凹槽，从而能够露出正极层。 在槽内形成有机层（110）。 有机层形成为依次层叠空穴传输层（111），发光层（112）和电子传输层（113）的结构。
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