公开(公告)号：US07741752B2

公开(公告)日：2010-06-22

申请号：US12232033

申请日：2008-09-10

申请人： Wen-Ching Shih ,  Hui-Min Wang

发明人： Wen-Ching Shih ,  Hui-Min Wang

IPC分类号： H03H9/25

CPC分类号： H03H3/10 ,  H03H9/02574

摘要： A high frequency SAW device and the substrate thereof are disclosed. The disclosed high frequency SAW device does not need to use the conventional and expensive sapphire substrate as its substrate. Besides, the disclosed substrate for a high-frequency SAW device can replace the conventional sapphire substrate in the use of the substrate for a high frequency SAW device. The disclosed high frequency SAW device comprises: a substrate; a first buffering layer forming on the surface of the substrate; a second buffering layer forming on the surface of the first buffering layer; a piezoelectric layer forming on the surface of the second buffering layer; an input transformation unit; and an output transformation unit, wherein the input transformation unit and the output transformation unit are formed in pairs on the surface of or beneath the piezoelectric layer.

摘要翻译： 公开了一种高频SAW器件及其基片。 所公开的高频SAW器件不需要使用常规和昂贵的蓝宝石衬底作为其衬底。 此外，所公开的用于高频SAW器件的衬底可以在使用用于高频SAW器件的衬底时替代传统的蓝宝石衬底。 所公开的高频SAW器件包括：衬底; 形成在所述基板的表面上的第一缓冲层; 形成在所述第一缓冲层的表面上的第二缓冲层; 形成在所述第二缓冲层的表面上的压电层; 输入变换单元; 以及输出变换单元，其中所述输入变换单元和所述输出变换单元成对地形成在所述压电层的表面上或下方。