公开(公告)号：US20120275075A1

公开(公告)日：2012-11-01

申请号：US13456918

申请日：2012-04-26

Applicant: Alexandre Dray ,  Philippe Galy ,  Johan Bourgeat

Inventor： Alexandre Dray ,  Philippe Galy ,  Johan Bourgeat

IPC: H02H9/04

CPC classification number: H01L27/0262 ,  H01L29/747 ,  H01L29/87

Abstract: Semiconducting device for protecting at least one node of an integrated circuit against electrostatic discharges, comprising a doublet of floating gate thyristors connected in parallel and head-to-foot, the two thyristors having respectively two distinct gates and a common gate formed by a common semiconducting layer, the anode of a first thyristor of the doublet and the cathode of the second thyristor of the doublet forming a first terminal of the doublet designed to be connected to a cold point and the cathode of the first thyristor of the doublet and the anode of the second thyristor of the doublet forming a second terminal of the doublet designed to be connected to the said node to be protected.

Abstract translation: 用于保护集成电路的至少一个节点免受静电放电的半导体器件，包括并联连接并且头对脚的两个浮栅晶闸管，两个晶闸管分别具有两个不同的栅极和由公共半导体形成的公共栅极 双层晶体管的第一晶闸管的阳极和双重晶体管的第二晶闸管的阴极形成双绞线的第一端子，被设计为连接到冷点，并且双极和第二晶体管的阳极的阴极 所述二重晶体管的第二晶闸管形成双绞线的第二端子，被设计为连接到所述待保护的节点。

公开(公告)号：US08164871B2

公开(公告)日：2012-04-24

申请号：US12506477

申请日：2009-07-21

Applicant: Philippe Galy ,  Christophe Entringer ,  Alexandre Dray

Inventor： Philippe Galy ,  Christophe Entringer ,  Alexandre Dray

IPC: H02H3/22

CPC classification number: H01L27/0262 ,  H01L29/0692 ,  H01L29/7436 ,  H01L29/747

Abstract: The integrated circuit may include at least one electronic protection circuit for protecting against at least one electrostatic discharge and being able to discharge the overvoltage current generated by the electrostatic discharge. The electronic protection circuit includes a controlled short-circuiting switch embodied in CMOS technology including a CMOS technology TRIAC or a CMOS technology thyristor arranged in anti-parallel with a CMOS technology diode, and a triggering circuit for controlling the short-circuiting switch.

Abstract translation: 集成电路可以包括至少一个电子保护电路，用于防止至少一个静电放电并且能够放电由静电放电产生的过电压电流。 电子保护电路包括具有CMOS技术的受控短路开关，包括与CMOS技术二极管反并联布置的CMOS技术TRIAC或CMOS技术晶闸管，以及用于控制短路开关的触发电路。

公开(公告)号：US20100027174A1

公开(公告)日：2010-02-04

申请号：US12506477

申请日：2009-07-21

Applicant: Philippe Galy ,  Christophe Entringer ,  Alexandre Dray

Inventor： Philippe Galy ,  Christophe Entringer ,  Alexandre Dray

IPC: H02H9/04 ,  H01L23/60

CPC classification number: H01L27/0262 ,  H01L29/0692 ,  H01L29/7436 ,  H01L29/747

Abstract: The integrated circuit may include at least one electronic protection circuit for protecting against at least one electrostatic discharge and being able to discharge the overvoltage current generated by the electrostatic discharge. The electronic protection circuit includes a controlled short-circuiting switch embodied in CMOS technology including a CMOS technology TRIAC or a CMOS technology thyristor arranged in anti-parallel with a CMOS technology diode, and a triggering circuit for controlling the short-circuiting switch.

Abstract translation: 集成电路可以包括至少一个电子保护电路，用于防止至少一个静电放电并且能够放电由静电放电产生的过电压电流。 电子保护电路包括具有CMOS技术的受控短路开关，包括与CMOS技术二极管反并联布置的CMOS技术TRIAC或CMOS技术晶闸管，以及用于控制短路开关的触发电路。