Very narrowband and wideband negative resistance amplifiers with a tuneable center frequency

    公开(公告)号:US11863131B1

    公开(公告)日:2024-01-02

    申请号:US17873838

    申请日:2022-07-26

    IPC分类号: H03F1/56 H03F3/04 H03H7/01

    CPC分类号: H03F1/565 H03F3/04 H03H7/1741

    摘要: A negative resistance amplifier including a negative resistance network where the negative resistance network may be any known circuit element characterized by a negative ratio of the voltage a between its output terminals and to the current flowing through the element: a reactance network resonant at the center frequency of the amplifier where the reactive network may contain a varactor for tuning of the resonant frequency of the reactance network: and a circulator whose port 1 is the input terminal of the amplifier, whose port 3 is the output port of the amplifier and whose port 2 is connected to the combination of the negative resistance network and the reactance network.

    High efficiency and high powerlinear amplifier

    公开(公告)号:US11223331B1

    公开(公告)日:2022-01-11

    申请号:US17356407

    申请日:2021-06-23

    摘要: An amplifier includes a Field Effect Transistor (FET) or a Bipolar Junction Transistor (BJT) with “hard saturation.”; where the FET or the BJT to has a nearly constant drain or collector current when the drain or collector voltage is greater than the pinchoff voltage. The amplifier further includes a bias network, configured to provide a DC voltage to the FET or the BJT, a means for isolating the DC voltage from the matching network, an electrical load, and a matching network which transforms the electrical load to a resistance between the drain and the source or the collector and emitter which causes the drain or collector voltage to be greater than the pinchoff voltage over the entire cycle of the sinusoidal voltage applied to the gate, whereby the amplifier is linear.