公开(公告)号：US20140048902A1

公开(公告)日：2014-02-20

申请号：US13585121

申请日：2012-08-14

申请人： Madhan M. Raj ,  Brian Alvarez ,  David P. Bour ,  Andrew P. Edward ,  Hui Nie ,  Isik C. Kizilyalli

发明人： Madhan M. Raj ,  Brian Alvarez ,  David P. Bour ,  Andrew P. Edward ,  Hui Nie ,  Isik C. Kizilyalli

IPC分类号： H01L21/329 ,  H01L29/872

CPC分类号： H01L29/66143 ,  H01L21/0254 ,  H01L21/02664 ,  H01L29/0619 ,  H01L29/2003 ,  H01L29/66121 ,  H01L29/66212 ,  H01L29/872

摘要： An MPS diode includes a III-nitride substrate characterized by a first conductivity type and a first dopant concentration and having a first side and a second side. The MPS diode also includes a III-nitride epitaxial structure comprising a first III-nitride epitaxial layer coupled to the first side of the substrate, wherein a region of the first III-nitride epitaxial layer comprises an array of protrusions. The III-nitride epitaxial structure also includes a plurality of III-nitride regions of a second conductivity type, each partially disposed between adjacent protrusions. Each of the plurality of III-nitride regions of the second conductivity type comprises a first section laterally positioned between adjacent protrusions and a second section extending in a direction normal to the first side of the substrate. The MPS diode further includes a first metallic structure electrically coupled to one or more of the protrusions and to one or more of the second sections.

摘要翻译： MPS二极管包括以第一导电类型和第一掺杂剂浓度为特征的III族氮化物衬底，其具有第一侧和第二侧。 MPS二极管还包括III族氮化物外延结构，其包括耦合到衬底的第一侧的第一III族氮化物外延层，其中第一III族氮化物外延层的区域包括突起阵列。 III族氮化物外延结构还包括多个第二导电类型的III族氮化物区域，每个部分设置在相邻的突起之间。 第二导电类型的多个III族氮化物区域中的每一个包括横向位于相邻突起之间的第一部分和沿着垂直于衬底的第一侧的方向延伸的第二部分。 MPS二极管还包括电耦合到一个或多个突起和一个或多个第二部分的第一金属结构。