公开(公告)号：US20240363341A1

公开(公告)日：2024-10-31

申请号：US18308064

申请日：2023-04-27

申请人： Robert Bosch GmbH

发明人： Mordechai KORNBLUTH ,  Bo CHENG ,  Charles TUFFILE ,  Jens BARINGHAUS ,  Roland PUESCHE

IPC分类号： H01L21/02 ,  H01L29/20 ,  H01L29/778

CPC分类号： H01L21/0242 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/7786

摘要： A gallium nitride (GaN) growth layer includes a first surface, a second surface, and a bulk region extending between the first and second surfaces, the bulk region having a polycrystalline material with coefficient of thermal expansion (CTE) of about 2-25 ppm/K above 800 K and one or more spinel compounds having formula (I):(ZnxCd1-x) (CryAl1-y)2O4 (I), where x and y are any number between 0 and 1, one of the first and second surfaces including a GaN epitaxial growth region.

公开(公告)号：US12112944B2

公开(公告)日：2024-10-08

申请号：US17728643

申请日：2022-04-25

申请人： THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION

发明人： Yuangang Wang ,  Shaobo Dun ,  Yuanjie Lv ,  Xingchang Fu ,  Shixiong Liang ,  Xubo Song ,  Hongyu Guo ,  Zhihong Feng

IPC分类号： H01L21/02 ,  H01L29/16 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

CPC分类号： H01L21/02458 ,  H01L21/02376 ,  H01L21/0254 ,  H01L21/02631 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786

摘要： The disclosure provides a preparation method of GaN field effect transistor based on diamond substrate, and relates to the technical field of semiconductor manufacturing. The method includes the following steps: preparing a GaN heterojunction layer on the front-side of a SiC substrate; thinning the SiC substrate; etching the SiC substrate; growing a diamond layer; removing a sacrificial layer and the diamond layer on the sacrificial layer; preparing a source electrode, a drain electrode and a gate electrode on the front surface of the GaN heterojunction layer; etching the SiC substrate and the GaN heterojunction layer to form a source through hole communicated with the source electrode; and removing the through hole mask layer, and preparing back grounding metal to complete the preparation of the diamond substrate GaN transistor device.

公开(公告)号：US12112943B2

公开(公告)日：2024-10-08

申请号：US17656324

申请日：2022-03-24

申请人： Tokyo Electron Limited

发明人： Keita Kumagai ,  Hiroto Fujikawa ,  Ryo Watanabe

IPC分类号： H01L21/02 ,  C23C16/02 ,  C23C16/38

CPC分类号： H01L21/02458 ,  C23C16/0272 ,  C23C16/38 ,  H01L21/02123 ,  H01L21/02532 ,  H01L21/0254

摘要： A method for forming a film that includes forming a boron nitride film on a substrate, and forming a boron-containing silicon film on the boron nitride film.

公开(公告)号：US20240332021A1

公开(公告)日：2024-10-03

申请号：US18697445

申请日：2022-09-29

申请人： INSPUR SUZHOU INTELLIGENT TECHNOLOGY CO., LTD.

发明人： Fen GUO ,  Kang SU ,  Hongtao MAN ,  Tuo LI

IPC分类号： H01L21/268 ,  C30B25/20 ,  C30B29/40 ,  C30B33/04 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L29/66

CPC分类号： H01L21/268 ,  C30B25/20 ,  C30B29/406 ,  C30B33/04 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/3043 ,  H01L21/30625 ,  H01L29/66462

摘要： Disclosed is a method for stripping a gallium nitride substrate, including: a gallium nitride substrate with a gallium nitride epitaxial structure directly grown on an upper surface thereof is acquired; an interior of the gallium nitride substrate is scanned and irradiated via the epitaxial structure by a laser beam, so as to generate a decomposition layer in the gallium nitride substrate, the laser beam being a laser having a pulse width on the order of less than 10−15 s, and a distance between the decomposition layer and the upper surface of the gallium nitride substrate being less than a thickness of the gallium nitride substrate; and the gallium nitride substrate is separated at the decomposition layer, so as to obtain a stripped gallium nitride substrate and a semiconductor device.

公开(公告)号：US20240321576A1

公开(公告)日：2024-09-26

申请号：US18579934

申请日：2022-07-19

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Kazunori HAGIMOTO ,  Ippei KUBONO

IPC分类号： H01L21/02 ,  H01L29/20

CPC分类号： H01L21/0254 ,  H01L21/0242 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L29/2003

摘要： A nitride semiconductor substrate including: a composite substrate with multiple layers stacked, a silicon oxide layer or a TEOS layer having a central flat surface and a side surface around the flat surface and stacked on the composite substrate; a single crystal silicon layer stacked on the silicon oxide layer or the TEOS layer, and a nitride semiconductor thin film deposited on the single crystal silicon layer, wherein the entire central flat surface of the silicon oxide layer or the TEOS layer is covered with the single crystal silicon layer.

公开(公告)号：US12094710B2

公开(公告)日：2024-09-17

申请号：US17219320

申请日：2021-03-31

申请人： TOKYO ELECTRON LIMITED ,  OSAKA UNIVERSITY

发明人： Nobuaki Takahashi ,  Hitoshi Miura ,  Koji Neishi ,  Ryuji Katayama ,  Yusuke Mori ,  Masayuki Imanishi

IPC分类号： C23C14/00 ,  C23C14/06 ,  C23C14/34 ,  H01J37/34 ,  H01L21/02

CPC分类号： H01L21/02631 ,  C23C14/0641 ,  C23C14/34 ,  H01J37/3426 ,  H01L21/02458 ,  H01L21/0254 ,  H01J2237/332 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02513 ,  H01L21/02576 ,  H01L21/02579

摘要： The method of forming a nitride semiconductor film includes intermittently sputtering a target of gallium nitride inside a vacuum chamber containing nitrogen and argon, and depositing sputtered particles of the gallium nitride that are scattered from the target inside the vacuum chamber, on a substrate having a temperature of 560 degrees C. or higher and 650 degrees C. or lower. A ratio of a flow rate of the nitrogen to a sum of the flow rate of the nitrogen and a flow rate of the argon supplied to the vacuum chamber is 6% or higher and 18% or lower.

公开(公告)号：US20240290614A1

公开(公告)日：2024-08-29

申请号：US18581774

申请日：2024-02-20

申请人： Infineon Technologies Austria AG

发明人： Jori Anttoni Lemettinen

IPC分类号： H01L21/02 ,  H01L21/66 ,  H01L29/20 ,  H01L33/00

CPC分类号： H01L21/0254 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/02381 ,  H01L22/12 ,  H01L29/2003 ,  H01L33/007

摘要： A method of fabricating a Group III nitride layer on a substrate includes placing a substrate having a growth surface in a chamber of an apparatus configured for MOPVE (Metal Organic Vapour Phase Epitaxy) processing. A nitrogen-containing gas and no Group III element-containing gas is then supplied for a first time period. After expiry of the first time period, the supply of the nitrogen-containing gas is stopped. A Group III element-containing gas and no nitrogen-containing gas is then supplied to the apparatus for a second time period. After expiry of the second time period, the supply of the Group III element-containing gas to the apparatus is stopped for a third time period. After expiry of the third time period, the Group III element-containing gas and the nitrogen-containing gas is supplied to the apparatus and a Group III nitride layer is formed on the growth surface of the substrate.

公开(公告)号：US20240279844A1

公开(公告)日：2024-08-22

申请号：US18623278

申请日：2024-04-01

申请人： MITSUBISHI CHEMICAL CORPORATION

发明人： Kenji ISO ,  Tatsuya TAKAHASHI ,  Tae MOCHIZUKI ,  Yuuki ENATSU

IPC分类号： C30B29/40 ,  C23C16/34 ,  C30B25/20 ,  H01L21/02 ,  H01L29/04 ,  H01L29/20 ,  H01L29/36 ,  H01L33/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32

CPC分类号： C30B29/406 ,  C23C16/34 ,  C30B25/20 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02576 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/36 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/16 ,  H01L33/32

摘要： Provided is an n-type GaN crystal, in which a donor impurity contained at the highest concentration is Ge, and which has a room-temperature resistivity of lower than 0.03 Ω·cm and a (004) XRD rocking curve FWHM of less than 20 arcsec. The n-type GaN crystal has two main surfaces, each having an area of 3 cm2 or larger. One of the two main surfaces can have a Ga polarity and can be inclined at an angle of 0° to 10° with respect to a (0001) crystal plane. Further, the n-type GaN crystal can have a diameter of 20 mm or larger.

公开(公告)号：US20240266168A1

公开(公告)日：2024-08-08

申请号：US18290601

申请日：2022-07-21

申请人： SCREEN Holdings Co., Ltd. ,  National University Corporation Tokai National Higher Education and Research System

发明人： Masaki INABA ,  Masahiro MIYAGI ,  Masaru HORI ,  Osamu ODA ,  Kazuki KODAMA

IPC分类号： H01L21/02 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  H01J37/32

CPC分类号： H01L21/0254 ,  C23C16/34 ,  C23C16/4408 ,  C23C16/45538 ,  C23C16/46 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32834 ,  H01L21/0262 ,  H01J2237/1825 ,  H01J2237/3321 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242

摘要： A method of manufacturing a group III-nitride semiconductor includes a loading step, a pressure reduction step, a heating step, a first film forming step, and a second film forming step. In the pressure reduction step, a pressure in the chamber is reduced. In the heating step, the substrate is heated. In the first film forming step, an organic metal gas containing a group III element is supplied to the substrate in the chamber, and a first gas containing hydrogen gas and nitrogen gas is excited into plasma and supplied to the substrate in the chamber. In the second film forming step, an organic metal gas containing the group III element is supplied to the substrate in the chamber, and a second gas not containing hydrogen gas and containing nitrogen gas is excited into plasma and supplied to the substrate in the chamber.

公开(公告)号：US12046695B2

公开(公告)日：2024-07-23

申请号：US16608071

申请日：2018-05-07

申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

发明人： Takeshi Kamikawa ,  Srinivas Gandrothula ,  Hongjian Li ,  Daniel A. Cohen

IPC分类号： H01L33/00 ,  H01L21/02 ,  H01L25/075 ,  H01S5/02 ,  H01S5/343

CPC分类号： H01L33/0093 ,  H01L25/0753 ,  H01L33/0075 ,  H01S5/0217 ,  H01S5/34333 ,  H01L21/0254 ,  H01L21/02647 ,  H01S2304/12

摘要： A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.