POWER SEMICONDUCTOR
    1.
    发明申请
    POWER SEMICONDUCTOR 审中-公开

    公开(公告)号:US20200350406A1

    公开(公告)日:2020-11-05

    申请号:US16856019

    申请日:2020-04-22

    摘要: A power semiconductor is provided. The power semiconductor includes a gate, a source, a silicon chip and a drain. The source includes a first copper particle layer and a first metal layer. The first copper particle layer covers the upper surface of the first metal layer. The silicon chip is bonded to the lower surface of the first metal layer. The drain is bonded to the lower surface of the silicon chip. The thickness of the first copper particle layer is greater than the thickness of the first metal layer. All copper mentioned are of large grain copper with size greater than 0.25 um.

    ROTATION RESETTING DEVICE AND ELECTRONIC APPARATUS

    公开(公告)号:US20190361490A1

    公开(公告)日:2019-11-28

    申请号:US16282252

    申请日:2019-02-21

    IPC分类号: G06F1/16 H05K5/02

    摘要: A rotation resetting device and an electronic apparatus are provided. The rotation resetting device includes a functional unit, a limiting block and an elastic unit. The functional unit includes a functional element and a supporting element connected to the functional element, wherein the supporting element includes a limiting gasket. The limiting block has an accommodating space with an opening and a taper chute extending downward from the opening. The elastic unit is located in the accommodating space and connected between the limiting block and the functional unit. The functional unit is movably disposed in the accommodating space and is capable of moving between an use position and a storage position relative to the opening. When the functional unit moves from the use position to the storage position, the limiting gasket abuts the taper chute, and rotates and slides downward along the taper chute while compressing the elastic unit.

    LASER LEVEL ASSEMBLY
    3.
    发明申请

    公开(公告)号:US20170102237A1

    公开(公告)日:2017-04-13

    申请号:US14877934

    申请日:2015-10-08

    申请人: Chen-Yu Liao

    发明人: Chen-Yu Liao

    IPC分类号: G01C15/00

    CPC分类号: G01C15/002 G01C15/004

    摘要: A laser level assembly includes a base kit and an adjustment unit which is pivotably connected to the base kit. The adjustment unit has a block, a pivotable member, multiple shafts and multiple bearings. The shafts extends through the bearings and the block such that the block is pivotable relative to the connection member of the base kit, and the pivotably member is pivotable to the block. The pivotable member is connected to the laser level. The pivotable member is pivotable about an axis that is perpendicular to the pivotable axis of the connection member. The laser level is always maintained at a position that the laser beam is parallel to a desired plane.

    POWER SEMICONDUCTOR
    4.
    发明申请

    公开(公告)号:US20230013532A1

    公开(公告)日:2023-01-19

    申请号:US17949185

    申请日:2022-09-20

    摘要: A power semiconductor including a gate, a source, a plurality of first long-strip source metal layer, a drain and a plurality of second long-strip drain metal layer is provided. The source includes a first copper particle layer and a first metal layer that covers the bottom surface of the first copper particle layer. The source is bonded to the first long-strip source metal layer via a first metal pillar. The drain includes a second copper particle layer and a second metal layer that covers the bottom surface of the second copper particle layer. The drain is bonded to the second long-strip drain metal layer via a second metal pillar. The thickness of the first copper particle layer and the second copper particle layer are 5 μm˜100 μm. The first copper particle layer and the second copper particle layer are formed by plating and stacking a plurality of large-grain copper.

    LASER DISTANCE MEASURE
    6.
    发明申请
    LASER DISTANCE MEASURE 审中-公开
    激光测距

    公开(公告)号:US20160231424A1

    公开(公告)日:2016-08-11

    申请号:US14617944

    申请日:2015-02-10

    IPC分类号: G01S17/32 G01S7/481

    摘要: A laser distance measure includes a box with an emitting path and a receiving path defined therein. The receiving path is a tubular path and has a reflection wall therein. A light emitting unit is located in the emitting path and emits a first beam out from the box via the emitting path. The first beam is bounced back when hitting an object and enters into the receiving path to form a second beam which passes through the receiving path and is received by a light receiver in the receiving path. The first beam is bounced back and reflected by the reflection wall so as to be successfully received by the light receiver so as to measure a short distance.

    摘要翻译: 激光距离测量包括具有发射路径和限定在其中的接收路径的盒。 接收路径是管状路径,其中具有反射壁。 发光单元位于发射路径中并且经由发射路径从盒中发射出第一光束。 当撞击物体并且进入接收路径时,第一光束被反弹以形成通过接收路径并被接收路径中的光接收器接收的第二光束。 第一个光束被反射回来并被反射壁反射,以便被光接收器成功地接收,以便测量短距离。

    Power semiconductor
    7.
    发明授权

    公开(公告)号:US11791382B2

    公开(公告)日:2023-10-17

    申请号:US17949185

    申请日:2022-09-20

    摘要: A power semiconductor including a gate, a source, a plurality of first long-strip source metal layer, a drain and a plurality of second long-strip drain metal layer is provided. The source includes a first copper particle layer and a first metal layer that covers the bottom surface of the first copper particle layer. The source is bonded to the first long-strip source metal layer via a first metal pillar. The drain includes a second copper particle layer and a second metal layer that covers the bottom surface of the second copper particle layer. The drain is bonded to the second long-strip drain metal layer via a second metal pillar. The thickness of the first copper particle layer and the second copper particle layer are 5 μm˜100 μm. The first copper particle layer and the second copper particle layer are formed by plating and stacking a plurality of large-grain copper.

    Power semiconductor
    8.
    发明授权

    公开(公告)号:US11462617B2

    公开(公告)日:2022-10-04

    申请号:US16856019

    申请日:2020-04-22

    摘要: A power semiconductor is provided. The power semiconductor includes a gate, a source, a silicon chip and a drain. The source includes a first copper particle layer and a first metal layer. The first copper particle layer covers the upper surface of the first metal layer. The silicon chip is bonded to the lower surface of the first metal layer. The drain is bonded to the lower surface of the silicon chip. The thickness of the first copper particle layer is greater than the thickness of the first metal layer. All copper mentioned are of large grain copper with size greater than 0.25 um.

    Rotation resetting device and electronic apparatus

    公开(公告)号:US10571959B2

    公开(公告)日:2020-02-25

    申请号:US16282252

    申请日:2019-02-21

    IPC分类号: G06F1/16 H05K5/02

    摘要: A rotation resetting device and an electronic apparatus are provided. The rotation resetting device includes a functional unit, a limiting block and an elastic unit. The functional unit includes a functional element and a supporting element connected to the functional element, wherein the supporting element includes a limiting gasket. The limiting block has an accommodating space with an opening and a taper chute extending downward from the opening. The elastic unit is located in the accommodating space and connected between the limiting block and the functional unit. The functional unit is movably disposed in the accommodating space and is capable of moving between an use position and a storage position relative to the opening. When the functional unit moves from the use position to the storage position, the limiting gasket abuts the taper chute, and rotates and slides downward along the taper chute while compressing the elastic unit.