公开(公告)号：US06461984B1

公开(公告)日：2002-10-08

申请号：US09535156

申请日：2000-03-24

Applicant: Chui-Hi Han ,  Nae-In Lee ,  Sung-Hoi Hur ,  Jin-Woo Lee

Inventor： Chui-Hi Han ,  Nae-In Lee ,  Sung-Hoi Hur ,  Jin-Woo Lee

IPC: H01L2131

CPC classification number: H01L29/6675 ,  H01L21/28273 ,  H01L29/4908 ,  H01L29/51 ,  H01L29/66825 ,  H01L29/78609 ,  H01L29/7883

Abstract: The present invention provides a highly reliable polycrystal silicon thin film transistor with N2O plasma oxide having an excellent leakage current characteristics comparable to the thermal oxide film formed on the crystalline silicon. Also, the present invention provides a method of fabricating EEPROM or flash memory using N2O plasma oxide as a tunnel oxide, and N2O plasma oxide film as an interpoly dielectric between the floating gate and the control gate.

Abstract translation: 本发明提供一种具有N2O等离子体氧化物的高度可靠的多晶硅薄膜晶体管，其具有与形成在结晶硅上的热氧化膜相当的优异的漏电流特性。另外，本发明提供一种使用N2O制造EEPROM或闪存的方法 等离子体氧化物作为隧道氧化物，N2O等离子体氧化膜作为浮置栅极和控制栅极之间的多晶硅电介质。