公开(公告)号：US20110205542A1

公开(公告)日：2011-08-25

申请号：US12712048

申请日：2010-02-24

Applicant: James Everett Pendell Jones ,  Anthony Bresenhan Kaye ,  Richard Forsberg Haglund ,  David Edward Cliffel ,  David Wright

Inventor： James Everett Pendell Jones ,  Anthony Bresenhan Kaye ,  Richard Forsberg Haglund ,  David Edward Cliffel ,  David Wright

IPC: G01N21/55 ,  B05D5/06

CPC classification number: G01N21/554 ,  B82Y30/00 ,  G01N21/171

Abstract: A sensor device includes an optical limiting structure including a metal layer with at least one metal particle having a size no greater than about 1500 nanometers, and a phase-change material layer disposed adjacent at least a portion of the metal layer, the phase-change material layer including a phase-change material, and a dendritic-metal layer disposed over at least a portion of the phase-change material layer of the optical limiting structure, the dendritic-metal layer including an organic compound including branching chain amino acid groups attached to a metal structure. The optical limiting structure is configured to transition from a first optical state to a second optical state when the phase-change material is heated above a critical temperature, with transmittance of light at a predetermined wavelength through the optical limiting structure being lower at the second optical state of the optical limiting structure in relation to the first optical state of the optical limiting structure.

Abstract translation: 传感器装置包括光学限制结构，该光学限制结构包括具有至少一个尺寸不大于约1500纳米的金属颗粒的金属层，以及邻近金属层的至少一部分设置的相变材料层，相变 包含相变材料的材料层和设置在所述光学限制结构的所述相变材料层的至少一部分上的树突状金属层，所述树枝状金属层包括附着有支链氨基酸的有机化合物 到金属结构。 光学限制结构被配置为当相变材料被加热到临界温度以上时，从第一光学状态转变到第二光学状态，通过光学限制结构的光在预定波长处的透射率在第二光学 相对于光学限制结构的第一光学状态的光学限制结构的状态。

公开(公告)号：US08586371B2

公开(公告)日：2013-11-19

申请号：US12712048

申请日：2010-02-24

Applicant: James Everett Pendell Jones ,  Anthony Bresenhan Kaye ,  Richard Forsberg Haglund ,  David Edward Cliffel ,  David Wright

Inventor： James Everett Pendell Jones ,  Anthony Bresenhan Kaye ,  Richard Forsberg Haglund ,  David Edward Cliffel ,  David Wright

IPC: G01N33/00

CPC classification number: G01N21/554 ,  B82Y30/00 ,  G01N21/171

Abstract: A sensor device includes an optical limiting structure including a metal layer with at least one metal particle having a size no greater than about 1500 nanometers, and a phase-change material layer disposed adjacent at least a portion of the metal layer, the phase-change material layer including a phase-change material, and a dendritic-metal layer disposed over at least a portion of the phase-change material layer of the optical limiting structure, the dendritic-metal layer including an organic compound including branching chain amino acid groups attached to a metal structure. The optical limiting structure is configured to transition from a first optical state to a second optical state when the phase-change material is heated above a critical temperature, with transmittance of light at a predetermined wavelength through the optical limiting structure being lower at the second optical state of the optical limiting structure in relation to the first optical state of the optical limiting structure.

Abstract translation: 传感器装置包括光学限制结构，该光学限制结构包括具有至少一个尺寸不大于约1500纳米的金属颗粒的金属层，以及邻近金属层的至少一部分设置的相变材料层，相变 包含相变材料的材料层和设置在所述光学限制结构的所述相变材料层的至少一部分上的树突状金属层，所述树枝状金属层包括附着有支链氨基酸的有机化合物 到金属结构。 光学限制结构被配置为当相变材料被加热到临界温度以上时，从第一光学状态转变到第二光学状态，通过光学限制结构的光在预定波长处的透射率在第二光学 相对于光学限制结构的第一光学状态的光学限制结构的状态。