公开(公告)号：US20080314445A1

公开(公告)日：2008-12-25

申请号：US11767951

申请日：2007-06-25

申请人： Thomas Francis McNulty ,  John Thomas Leman ,  Larry Neil Lewis ,  Mark Philip D'Evelyn ,  Victor Lienkong Lou ,  Roman Shuba ,  Kenrick Martin Lewis ,  Frank Dominic Mendicino ,  Johan Heinrich van Dongeren

发明人： Thomas Francis McNulty ,  John Thomas Leman ,  Larry Neil Lewis ,  Mark Philip D'Evelyn ,  Victor Lienkong Lou ,  Roman Shuba ,  Kenrick Martin Lewis ,  Frank Dominic Mendicino ,  Johan Heinrich van Dongeren

IPC分类号： H01L31/00 ,  C01B33/021

CPC分类号： C01B33/025 ,  C01B33/023 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of forming high-purity elemental silicon is disclosed. The method includes the step of heating a silica gel composition, or an intermediate composition derived from a silica gel composition, wherein the silica gel composition or intermediate composition includes at least about 5% by weight carbon, and the heating temperature is above about 1550° C. The heating step results in the production of a product which includes elemental silicon. Another aspect of the invention relates to a method for making a photovoltaic cell. The method includes the step of forming a semiconductor substrate from elemental silicon prepared as described in this disclosure. Additional steps are then undertaken to fabricate the photovoltaic device.

摘要翻译： 公开了形成高纯度元素硅的方法。 该方法包括加热硅胶组合物或由硅胶组合物衍生的中间体组合物的步骤，其中硅胶组合物或中间体组合物包含至少约5重量％的碳，加热温度高于约1550℃ 加热步骤导致包括元素硅的产品的生产。 本发明的另一方面涉及一种制造光伏电池的方法。 该方法包括从如本公开所述制备的元素硅形成半导体衬底的步骤。 然后进行附加步骤以制造光伏器件。