公开(公告)号：US6090669A

公开(公告)日：2000-07-18

申请号：US731104

申请日：1996-10-09

申请人： Giovanni Franco ,  Cateno Marco Camalleri ,  Ferruccio Frisina

发明人： Giovanni Franco ,  Cateno Marco Camalleri ,  Ferruccio Frisina

IPC分类号： H01L21/761 ,  H01L21/225 ,  H01L21/265 ,  H01L29/06 ,  H01L21/336

CPC分类号： H01L21/2253 ,  H01L29/0615 ,  H01L29/0619

摘要： A fabrication method for high voltage power devices with at least one deep edge ring includes the steps of growing a lightly doped N-type epitaxial layer on a heavily doped N-type substrate, growing an oxide on the upper portion of the epitaxial layer, masking and then implanting boron ions, etching the oxide to expose regions for aluminum ion implantation, forming a layer of preimplantation oxide, masking of the body regions with a layer of photosensitive material and implanting aluminum ions, and a single thermal diffusion process forming a layer of thermal oxide on the epitaxial layer and simultaneously forming at least one deep aluminum ring and an adjacent body region doped with boron.

摘要翻译： 具有至少一个深边缘环的高电压功率器件的制造方法包括以下步骤：在重掺杂的N型衬底上生长轻掺杂的N型外延层，在外延层的上部生长氧化物，掩模 然后注入硼离子，蚀刻氧化物以暴露用于铝离子注入的区域，形成预植入氧化物层，用感光材料层掩蔽身体区域并注入铝离子，以及形成一层 并且同时形成至少一个深铝环和掺杂有硼的相邻体区。

公开(公告)号：US06221719B1

公开(公告)日：2001-04-24

申请号：US09119853

申请日：1998-07-21

申请人： Giovanni Franco

发明人： Giovanni Franco

IPC分类号： H01L21336

CPC分类号： H01L29/7802 ,  H01L21/2253 ,  H01L29/0696 ,  H01L29/66712

摘要： Process for the manufacturing of a DMOS-technology transistor, providing for forming, over a semiconductor material layer of a first conductivity type, an insulated gate electrode, introducing in said semiconductor material layer a first dopant of a second conductivity type for forming at least one body region of a second conductivity type extending under the insulated gate electrode, and introducing in said at least one body region a second dopant of the first conductivity type for forming, inside said body region, at least one source region of the first conductivity type, said body region and said source region defining, under the insulated gate electrode, a channel region for the DMOS transistor, wherein said first dopant is aluminum. After the introduction of said first dopant and said second dopant, a single thermal diffusion process for simultaneously diffusing the first dopant and the second dopant is provided.

摘要翻译： 用于制造DMOS技术晶体管的方法，提供在第一导电类型的半导体材料层上形成绝缘栅电极，在所述半导体材料层中引入第二导电类型的第一掺杂剂，以形成至少一个 在所述绝缘栅极下方延伸的第二导电类型的主体区域，并且在所述至少一个体区域中引入第一导电类型的第二掺杂剂，用于在所述体区内形成至少一个第一导电类型的源极区域， 所述体区域和所述源极区域在所述绝缘栅电极下限定用于所述DMOS晶体管的沟道区，其中所述第一掺杂剂是铝。 在引入所述第一掺杂剂和所述第二掺杂剂之后，提供用于同时扩散第一掺杂剂和第二掺杂剂的单一热扩散工艺。

公开(公告)号：USD405387S

公开(公告)日：1999-02-09

申请号：US85739

申请日：1998-03-30

申请人： Giovanni Franco Masello

设计人： Giovanni Franco Masello

公开(公告)号：US5209282A

公开(公告)日：1993-05-11

申请号：US312049

申请日：1989-02-14

申请人： Giovanni Franco ,  Angelo Cianci

发明人： Giovanni Franco ,  Angelo Cianci

IPC分类号： B29C47/04 ,  B29D16/00 ,  E06B9/262 ,  E06B9/386

CPC分类号： E06B9/386 ,  B29C47/003 ,  B29C47/062 ,  B29D16/00 ,  E06B9/262 ,  B29C47/0019 ,  B29K2995/0021 ,  B29L2009/00 ,  B29L2031/44 ,  B29L2031/7192 ,  B29L2031/722

摘要： There is disclosed a blind slat to be used particularly for vertical blinds wherein at least the outer surface is formed with regularly distributed successive corrugations. In practice, the inner face is also corrugated. The slat is extruded from a plastic material of one basic color and preselected opposite surfaces forming the corrugations are of a color which is different from the basic color. Some or all of the remaining opposite surfaces have the basic color or a color which different from the basic color and from the color of the preselected opposite surfaces. Such blind slat is particularly useful to create special effects for example by vertical blinds. The method and the apparatus for producing these blind slats are also disclosed.

摘要翻译： 公开了一种特别用于垂直百叶窗的盲板，其中至少外表面形成有规则分布的连续波纹。 在实践中，内表面也是波纹状的。 板条从一种基本颜色的塑料材料挤出，并且形成波纹的预选的相对表面具有不同于基本颜色的颜色。 剩余的相对表面中的一些或全部具有基本颜色或不同于预选相对表面的基本颜色和颜色的颜色。 这样的盲板特别适用于例如垂直百叶窗产生特殊效果。 还公开了用于制造这些盲板的方法和装置。

公开(公告)号：US06446388B2

公开(公告)日：2002-09-10

申请号：US09912175

申请日：2001-07-24

申请人： Giovanni Franco Masello

发明人： Giovanni Franco Masello

IPC分类号： C10J368

CPC分类号： A01G27/06

摘要： A container with diffuse and extended irrigation for cultivating plants, which includes porous regions in the containment walls, which are arranged in contact with the soil of a plant, and a water reserve for supplying the porous regions. The container further includes a waterproofing layer for covering the porous regions, in their parts that are not in contact, for preventing the water from being lost by evaporation from the porous regions toward the outside of the container. The invention solves the problems of conventional containers, providing the soil with the right amount of moisture in an extremely simple manner for several days, accordingly avoiding periodic watering.