公开(公告)号：US20080213968A1

公开(公告)日：2008-09-04

申请号：US11766308

申请日：2007-06-21

Applicant: Cheng-Che Lee ,  Hui-Ling Chuang ,  Hsing-Wu Yeh

Inventor： Cheng-Che Lee ,  Hui-Ling Chuang ,  Hsing-Wu Yeh

IPC: H01L21/20

CPC classification number: H01L28/91 ,  H01L27/0207 ,  H01L27/10852

Abstract: A method for fabricating a capacitor includes firstly providing a substrate. A doped first dielectric layer and an undoped second dielectric layer are then formed on the substrate sequentially. Next, many trenches are formed in the first and the second dielectric layers. Afterwards, an ion implantation process is performed in the largest space between the adjacent trenches to form an ion-implanted region in a portion of the second dielectric layer in upper parts of the trenches. A wet etching process is then performed to remove a portion of the second dielectric layer in the ion-implanted region and a portion of the first dielectric layer at bottoms of the trenches. Thereafter, a first conductive layer and a capacitor dielectric layer are formed sequentially on surfaces of the trenches. Finally, a second conductive layer is formed in the trenches.

Abstract translation: 制造电容器的方法包括首先提供衬底。 然后依次在衬底上形成掺杂的第一介电层和未掺杂的第二介电层。 接下来，在第一和第二电介质层中形成许多沟槽。 然后，在相邻沟槽之间的最大空间中进行离子注入工艺，以在沟槽的上部的第二电介质层的一部分中形成离子注入区。 然后执行湿式蚀刻工艺以去除离子注入区域中的第二介电层的一部分和在沟槽底部的第一电介质层的一部分。 此后，在沟槽的表面上依次形成第一导电层和电容器电介质层。 最后，在沟槽中形成第二导电层。