公开(公告)号：US3974518A

公开(公告)日：1976-08-10

申请号：US551991

申请日：1975-02-21

Applicant: Basil Charles Lewis, Jr. ,  James Robert Mathews ,  Louis Henry Von Ohlsen, Jr.

Inventor： Basil Charles Lewis, Jr. ,  James Robert Mathews ,  Louis Henry Von Ohlsen, Jr.

IPC: H01L23/66 ,  H01L39/02 ,  H01L23/02

CPC classification number: H01L23/66 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/3011

Abstract: An hermetic sealed microwave diode package having high thermal conductivity and very low parasitic impedances. The diode chip is mounted upon a diamond member embedded in a copper base member so that the diamond mounting surface and the copper base member surface are coplanar. A fused silica insulator ring produced by selective grit blasting surrounds the chip and is mounted likewise entirely on the diamond surface. The silica insulator has a height comparable to the thickness of the semiconductor chip and the enclosure is completed by a metal covering member which includes a contact to the top surface of the diode chip. The package thereby has extremely short conductive paths and low capacitance by virtue of the very small silica insulator ring.

Abstract translation: 密封的微波二极管封装具有高导热性和非常低的寄生阻抗。 二极管芯片安装在嵌入铜基构件的金刚石构件上，使得金刚石安装表面和铜基构件表面是共面的。 通过选择性喷砂生产的熔融硅石绝缘体环绕芯片，同样完全安装在金刚石表面上。 二氧化硅绝缘体具有与半导体芯片的厚度相当的高度，并且外壳由包括与二极管芯片的顶表面的接触的金属覆盖件完成。 由于非常小的二氧化硅绝缘体环，封装由此具有极短的导电路径和低的电容。