公开(公告)号：US20070141732A1

公开(公告)日：2007-06-21

申请号：US11401366

申请日：2006-04-11

Applicant: Kuan-Hsun Huang ,  Jen-Lang Lue

Inventor： Kuan-Hsun Huang ,  Jen-Lang Lue

IPC: H01L21/66

CPC classification number: H01L22/12

Abstract: A structural analysis method of deep trenches is provided. A substrate having a plurality of deep trenches is provided. A polishing process is performed on the substrate to form an incline in a partial region of the substrate to expose surface structures at different depths of the deep trenches. Then, a structural analysis of the surface structures at different depths of the deep trenches is performed to observe defects.

Abstract translation: 提供深沟的结构分析方法。 提供具有多个深沟槽的衬底。 在衬底上进行抛光处理以在衬底的部分区域中形成倾斜，以暴露深沟槽不同深度处的表面结构。 然后，对深沟槽不同深度的表面结构进行结构分析，观察缺陷。

公开(公告)号：US20060094132A1

公开(公告)日：2006-05-04

申请号：US11031075

申请日：2005-01-10

Applicant: Hsien-Wen Liu ,  Eugene Cheng ,  Jen-Lang Lue

Inventor： Hsien-Wen Liu ,  Eugene Cheng ,  Jen-Lang Lue

IPC: H01L21/66

CPC classification number: H01L22/24

Abstract: A method for analyzing the structure of deep trench capacitors and a preparation method thereof are described. A protective layer is formed on a selected inspection area. Overlying circuit layers and an upper portion of a substrate, surrounding the selected inspection area, of the die are removed. A chemical etchant is used to selectively remove the exposed substrate material to uncover deep trench capacitors. A structural analysis of those deep trench capacitors is then performed.

Abstract translation: 对深沟槽电容器的结构分析方法及其制备方法进行说明。 在选定的检查区域上形成保护层。 去除覆盖电路层和围绕选定的检查区域的基板的上部。 使用化学蚀刻剂来选择性地去除暴露的基底材料以露出深沟槽电容器。 然后对这些深沟槽电容器进行结构分析。

公开(公告)号：US07329550B2

公开(公告)日：2008-02-12

申请号：US11031075

申请日：2005-01-10

Applicant: Hsien-Wen Liu ,  Eugene Cheng ,  Jen-Lang Lue

Inventor： Hsien-Wen Liu ,  Eugene Cheng ,  Jen-Lang Lue

IPC: H01L21/66

CPC classification number: H01L22/24

Abstract: A method for analyzing the structure of deep trench capacitors and a preparation method thereof are described. A protective layer is formed on a selected inspection area. Overlying circuit layers and an upper portion of a substrate, surrounding the selected inspection area, of the die are removed. A chemical etchant is used to selectively remove the exposed substrate material to uncover deep trench capacitors. A structural analysis of those deep trench capacitors is then performed.

Abstract translation: 对深沟槽电容器的结构分析方法及其制备方法进行说明。 在选定的检查区域上形成保护层。 去除覆盖电路层和围绕选定的检查区域的基板的上部。 使用化学蚀刻剂来选择性地去除暴露的基底材料以露出深沟槽电容器。 然后对这些深沟槽电容器进行结构分析。