公开(公告)号：US20190280191A1

公开(公告)日：2019-09-12

申请号：US16346652

申请日：2017-10-27

申请人： Johan Åkerman AB

发明人： Johan ÅKERMAN ,  Ahmad A AWAD ,  Philipp DÜRRENFELD ,  Afshin HOUSHANG ,  Mykola DVORNIK

IPC分类号： H01L43/06 ,  H01F10/32

摘要： A spin oscillator device (1) comprising a first spin Hall effect nano-oscillator, SHNO (2), having an extended multi-layered magnetic thin-film stack (2), wherein a nano-constriction, NC, (6) is provided in said magnetic film stack (2) providing an SHNO(2, 6) comprising a magnetic free-layer (3) and a spin Hall effect layer, and having a nanoscopic region, wherein the NC (6) is configured to focus electric current (Idc) to the nanoscopic region, configured to generate the necessary current densities needed to excite magnetization auto-oscillations, MAO, in the magnetic free layer (3), wherein a circumferential magnetic field (HOe) surrounds the NC (6), wherein an externally applied field (Hext) with a substantial out-of-plane component is configured to control the spatial extension of the MAO towards a second spin oscillator device (NCn), which is arranged in MAO communication and synchronized to the first NC (NC1).