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公开(公告)号:US20190280191A1
公开(公告)日:2019-09-12
申请号:US16346652
申请日:2017-10-27
申请人: Johan Åkerman AB
摘要: A spin oscillator device (1) comprising a first spin Hall effect nano-oscillator, SHNO (2), having an extended multi-layered magnetic thin-film stack (2), wherein a nano-constriction, NC, (6) is provided in said magnetic film stack (2) providing an SHNO(2, 6) comprising a magnetic free-layer (3) and a spin Hall effect layer, and having a nanoscopic region, wherein the NC (6) is configured to focus electric current (Idc) to the nanoscopic region, configured to generate the necessary current densities needed to excite magnetization auto-oscillations, MAO, in the magnetic free layer (3), wherein a circumferential magnetic field (HOe) surrounds the NC (6), wherein an externally applied field (Hext) with a substantial out-of-plane component is configured to control the spatial extension of the MAO towards a second spin oscillator device (NCn), which is arranged in MAO communication and synchronized to the first NC (NC1).