公开(公告)号：US20130153958A1

公开(公告)日：2013-06-20

申请号：US13556980

申请日：2012-07-24

申请人： Kazuhiro KURACHI

发明人： Kazuhiro KURACHI

IPC分类号： H01L29/70

CPC分类号： H03K17/18 ,  H01L23/58 ,  H01L25/072 ,  H01L2924/0002 ,  H02M1/08 ,  H03K17/0828 ,  H01L2924/00

摘要： A semiconductor switching device includes a package, and a semiconductor switching element provided in the package and having a collector electrode and an emitter electrode. A main collector terminal and a main emitter terminal reflect voltage drop generated during application of current by a floating component in the package. A second collector terminal and a second emitter terminal detect a voltage between the collector electrode and the emitter electrode without reflecting the voltage drop. A third emitter terminal is arranged close to the second emitter terminal, and detects the voltage drop generated between the main emitter terminal and the second emitter terminal.

摘要翻译： 半导体开关器件包括封装和设置在封装中并具有集电极和发射极的半导体开关元件。 主集电极端子和主发射极端子反映了通过封装中的浮动部件施加电流期间产生的电压降。 第二集电极端子和第二发射极端子检测集电极和发射极之间的电压，而不反映电压降。 第三发射极端子靠近第二发射极端子布置，并且检测在主发射极端子和第二发射极端子之间产生的电压降。

公开(公告)号：US5777506A

公开(公告)日：1998-07-07

申请号：US700874

申请日：1996-08-21

申请人： Kazuhiro Kurachi ,  Masanori Yamamoto

发明人： Kazuhiro Kurachi ,  Masanori Yamamoto

IPC分类号： H01L29/744 ,  H01L29/74 ,  H02M1/06 ,  H03K17/0812 ,  H03K17/0814 ,  H03K17/16 ,  H03K17/72 ,  H03K17/732

CPC分类号： H03K17/08144 ,  H03K17/08124 ,  H03K17/16 ,  H03K17/732

摘要： An inductance in a path (R1) from a gate electrode (3G) of a GTO (3) through a gate driver (4) and a node (13) to a cathode electrode (3K) is determined so that a turn-off gain may be not more than 1. At a turn-off, a main current (I.sub.A) is entirely commutated from the gate electrode (3G) towards the node (13) through the gate driver (4) in a direction reverse to a turn-off control current (I.sub.G) A peak voltage suppressing circuit (5) clamps an anode-cathode voltage (V.sub.A-K) which rises on, to a prescribed voltage value for a prescribed time. This prevents losses caused by a snubber circuit. Commutation of a main current to the gate prevents locally concentrating in the cathode side of the semiconductor switching element, to thereby increase the turn off capability of the semiconductor switching element. Further, this prevents or reduces dissipation of large amount produced by a discharge of the electric charges from a snubber capacitor. Thus, reduction in dissipation and in size of the whole apparatus can be achieved.

摘要翻译： 确定从GTO（3）通过栅极驱动器（4）和节点（13）到阴极电极（3K）的栅电极（3G）的路径（R1）中的电感，使得关断增益 在关断时，主电流（IA）通过栅极驱动器（4）在与栅极电极（3G）相反的方向上从栅电极（3G）整个地转向节点（13） 关闭控制电流（IG）峰值电压抑制电路（5）将上升的阳极 - 阴极电压（VA-K）钳位到规定电压值达规定时间。 这可以防止由缓冲电路引起的损耗。 对栅极的主电流的换向防止半导体开关元件的阴极侧的局部集中，从而增加半导体开关元件的关断能力。 此外，这防止或减少由缓冲电容器放电电荷产生的大量的耗散。 因此，可以实现整个装置的耗散和大小的减小。

公开(公告)号：US08823054B2

公开(公告)日：2014-09-02

申请号：US13556980

申请日：2012-07-24

申请人： Kazuhiro Kurachi

发明人： Kazuhiro Kurachi

IPC分类号： H01L29/02

CPC分类号： H03K17/18 ,  H01L23/58 ,  H01L25/072 ,  H01L2924/0002 ,  H02M1/08 ,  H03K17/0828 ,  H01L2924/00

摘要： A semiconductor switching device includes a package, and a semiconductor switching element provided in the package and having a collector electrode and an emitter electrode. A main collector terminal and a main emitter terminal reflect voltage drop generated during application of current by a floating component in the package. A second collector terminal and a second emitter terminal detect a voltage between the collector electrode and the emitter electrode without reflecting the voltage drop. A third emitter terminal is arranged close to the second emitter terminal, and detects the voltage drop generated between the main emitter terminal and the second emitter terminal.

摘要翻译： 半导体开关器件包括封装和设置在封装中并具有集电极和发射极的半导体开关元件。 主集电极端子和主发射极端子反映了通过封装中的浮动部件施加电流期间产生的电压降。 第二集电极端子和第二发射极端子检测集电极和发射极之间的电压，而不反映电压降。 第三发射极端子靠近第二发射极端子布置，并且检测在主发射极端子和第二发射极端子之间产生的电压降。

公开(公告)号：USRE38734E1

公开(公告)日：2005-05-17

申请号：US10259859

申请日：2002-09-30

申请人： Kazuhiro Kurachi ,  Masanori Yamamoto

发明人： Kazuhiro Kurachi ,  Masanori Yamamoto

IPC分类号： H01L29/744 ,  H01L29/74 ,  H02M1/06 ,  H03K17/0812 ,  H03K17/0814 ,  H03K17/16 ,  H03K17/72 ,  H03K17/732

CPC分类号： H03K17/08144 ,  H03K17/08124 ,  H03K17/16 ,  H03K17/732

摘要： An inductance in a path (R1) from a gate electrode (3G) of a GTO (3) through a gate driver (4) and a node (13) to a cathode electrode (3K) is determined so that a turn-off gain may be not more than 1. At a turn-off, a main current (IA) is entirely commutated from the gate electrode (3G) towards the node (13) through the gate driver (4) in a direction reverse to a turn-off control current (IG) A peak voltage suppressing circuit (5) clamps an anode-cathode voltage (VA-K) which rises on, to a prescribed voltage value for a prescribed time. This prevents losses caused by a snubber circuit. Commutation of a main current to the gate prevents locally concentrating in the cathode side of the semiconductor switching element, to thereby increase the turn off capability of the semiconductor switching element. Further, this prevents or reduces dissipation of large amount produced by a discharge of the electric charges from a snubber capacitor. Thus, reduction in dissipation and in size of the whole apparatus can be achieved.

摘要翻译： 确定从GTO（3）通过栅极驱动器（4）和节点（13）到阴极电极（3K）的栅电极（3 G）的路径（R 1）中的电感，使得转 关闭增益可以不大于1.在关断时，通过栅极将主电流（I A> A）从栅电极（3G）完全换向节点（13） 驱动器（4）在与关断控制电流（I SUB）相反的方向上。峰值电压抑制电路（5）夹持阳极 - 阴极电压（V SUB） ）上升到规定电压值达规定时间。 这可以防止由缓冲电路引起的损耗。 对栅极的主电流的换向防止半导体开关元件的阴极侧的局部集中，从而增加半导体开关元件的关断能力。 此外，这防止或减少由缓冲电容器放电电荷产生的大量的耗散。 因此，可以实现整个装置的耗散和尺寸的减小。