公开(公告)号：US06709875B2

公开(公告)日：2004-03-23

申请号：US09925201

申请日：2001-08-08

申请人： Stephen R. Gilbert ,  Trace Q. Hurd ,  Laura W. Mirkarimi ,  Scott Summerfelt ,  Luigi Colombo

发明人： Stephen R. Gilbert ,  Trace Q. Hurd ,  Laura W. Mirkarimi ,  Scott Summerfelt ,  Luigi Colombo

IPC分类号： H01G706

CPC分类号： H01L21/6708 ,  H01L21/31122 ,  H01L21/32136 ,  H01L27/0805 ,  H01L27/11502 ,  H01L28/55

摘要： A ferroelectric device fabrication process is described in which ferroelectric device contaminant substances (e.g., Pb, Zr, Ti, and Ir) that are incompatible with standard CMOS fabrication processes are tightly controlled. In particular, specific etch chemistries have been developed to remove incompatible substances from the backside and edge surfaces of the substrate after a ferroelectric device has been formed. In addition, a sacrificial layer may be disposed over the bottom and edge surfaces (and, in some embodiments, the frontside edge exclusion zone surface) of the substrate to assist in the removal of difficult-to-etch contaminants (e.g., Ir). In this way, the ferroelectric device fabrication process may be integrated with a standard semiconductor fabrication process, whereby ferroelectric devices may be formed together with semiconductor integrated circuits without substantial risk of cross-contamination through shared equipment (e.g., steppers, metrology tools, and the like).

摘要翻译： 描述了与标准CMOS制造工艺不兼容的铁电体器件污染物质（例如，Pb，Zr，Ti和Ir）被严格控制的铁电器件制造工艺。 特别地，已经开发了特定的蚀刻化学物质，以在形成铁电体器件之后从衬底的背面和边缘表面去除不相容的物质。 此外，牺牲层可以设置在衬底的底部和边缘表面（以及在一些实施例中，前侧边缘排除区域表面）之上，以帮助去除难以蚀刻的污染物（例如Ir）。 以这种方式，铁电体器件的制造工艺可以与标准的半导体制造工艺集成在一起，由此铁电器件可以与半导体集成电路一起形成，而没有通过共享设备（例如，步进器，计量工具和 喜欢）。

公开(公告)号：US06560006B2

公开(公告)日：2003-05-06

申请号：US09846748

申请日：2001-04-30

申请人： Mihail M. Sigalas ,  Annette Grot ,  Laura W. Mirkarimi ,  Curt Flory

发明人： Mihail M. Sigalas ,  Annette Grot ,  Laura W. Mirkarimi ,  Curt Flory

IPC分类号： G02F100

CPC分类号： H01P1/2005 ,  B82Y20/00 ,  G02B6/1225 ,  G02B2006/12061 ,  G02B2006/12078

摘要： Two-dimensional photonic crystal slab apparatus and a method for fabricating two-dimensional photonic crystal slab apparatus. A two-dimensional photonic crystal slab apparatus has a photonic crystal slab containing a two-dimensional periodic lattice, and upper and lower cladding layers for the photonic crystal slab, the upper and lower cladding layers each having a metallic cladding layer. The metallic cladding layers permit achieving substantially perfect light transmission through a waveguide in the slab, even when the waveguide is strongly bent. The fabrication method includes forming a two-dimensional photonic crystal slab from a dielectric slab supported on a substrate by, for example, an etch process.