公开(公告)号：US07714390B2

公开(公告)日：2010-05-11

申请号：US11385044

申请日：2006-03-20

Applicant: Denis Cottin ,  Thierry Schwartzmann ,  Jean-Charles Vildeuil ,  Bertrand Martinet ,  Sophie Taupin ,  Mathieu Marin

Inventor： Denis Cottin ,  Thierry Schwartzmann ,  Jean-Charles Vildeuil ,  Bertrand Martinet ,  Sophie Taupin ,  Mathieu Marin

IPC: H01L23/62

CPC classification number: H01L27/0802 ,  H01L29/8605

Abstract: An integrated circuit includes a substrate and a resistor. The resistor is formed from at least two access wells of a first conductivity type and a deep buried layer electrically connecting the wells. The deep buried layer is at least partly covered by a region of opposite conductivity.

Abstract translation: 集成电路包括衬底和电阻器。 电阻器由至少两个第一导电类型的访问阱和电连接阱的深埋层形成。 深埋层至少部分地被相反电导率的区域覆盖。

公开(公告)号：US20060226512A1

公开(公告)日：2006-10-12

申请号：US11385044

申请日：2006-03-20

Applicant: Denis Cottin ,  Thierry Schwartzmann ,  Jean-Charles Vildeuil ,  Bertrand Martinet ,  Sophie Taupin ,  Mathieu Marin

Inventor： Denis Cottin ,  Thierry Schwartzmann ,  Jean-Charles Vildeuil ,  Bertrand Martinet ,  Sophie Taupin ,  Mathieu Marin

IPC: H01L29/00

CPC classification number: H01L27/0802 ,  H01L29/8605

Abstract: An integrated circuit includes a substrate and a resistor. The resistor is formed from at least two access wells of a first conductivity type and a deep buried layer electrically connecting the wells. The deep buried layer is at least partly covered by a region of opposite conductivity.

Abstract translation: 集成电路包括基板和电阻器。 电阻器由至少两个第一导电类型的访问阱和电连接阱的深埋层形成。 深埋层至少部分地被相反电导率的区域覆盖。