公开(公告)号：US06777759B1

公开(公告)日：2004-08-17

申请号：US09654315

申请日：2000-09-01

申请人： Robert S. Chau ,  Ebrahim Andideh ,  Mitch C. Taylor ,  Chia-Hong Jan ,  Julie Tsai

发明人： Robert S. Chau ,  Ebrahim Andideh ,  Mitch C. Taylor ,  Chia-Hong Jan ,  Julie Tsai

IPC分类号： H01L2976

CPC分类号： H01L29/66515 ,  H01L21/28525 ,  H01L21/28562 ,  H01L21/823814 ,  H01L21/823835 ,  H01L21/823878 ,  H01L29/41766 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66636

摘要： A semiconductor device having a novel spacer structure and method of fabrication. The present invention describes a semiconductor device which has an electrode with a first thickness. A silicide layer having a second thickness is formed on the electrode. A sidewall spacer which is formed adjacent to the electrode has a height which is greater than the sum of the thickness of the electrode and the thickness of the silicide layer.

摘要翻译： 一种具有新型间隔结构和制造方法的半导体器件。 本发明描述了具有第一厚度的电极的半导体器件。 在电极上形成具有第二厚度的硅化物层。 与电极相邻形成的侧壁间隔物的高度大于电极的厚度和硅化物层的厚度之和。

公开(公告)号：US06765273B1

公开(公告)日：2004-07-20

申请号：US09115405

申请日：1998-07-14

申请人： Robert S. Chau ,  Ebrahim Andideh ,  Mitch C. Taylor ,  Chia-Hong Jan ,  Julie Tsai

发明人： Robert S. Chau ,  Ebrahim Andideh ,  Mitch C. Taylor ,  Chia-Hong Jan ,  Julie Tsai

IPC分类号： H01L2976

CPC分类号： H01L29/66515 ,  H01L21/28525 ,  H01L21/28562 ,  H01L21/823814 ,  H01L21/823835 ,  H01L21/823878 ,  H01L29/41766 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66636

摘要： A semiconductor device having a novel spacer structure and method of fabrication. The present invention describes a semiconductor device which has an electrode with a first thickness. A silicide layer having a second thickness is formed on the electrode. A sidewall spacer which is formed adjacent to the electrode has a height which is greater than the sum of the thickness of the electrode and the thickness of the silicide layer.

公开(公告)号：US06518155B1

公开(公告)日：2003-02-11

申请号：US08884912

申请日：1997-06-30

申请人： Robert S. Chau ,  Ebrahim Andideh ,  Mitch C. Taylor ,  Chia-Hong Jan ,  Julie Tsai

发明人： Robert S. Chau ,  Ebrahim Andideh ,  Mitch C. Taylor ,  Chia-Hong Jan ,  Julie Tsai

IPC分类号： H01L213205

CPC分类号： H01L29/66515 ,  H01L21/28525 ,  H01L21/28562 ,  H01L21/823814 ,  H01L21/823835 ,  H01L21/823878 ,  H01L29/41766 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66636

摘要： A semiconductor device having a novel spacer structure and method of fabrication. The present invention describes a semiconductor device which has an electrode with a first thickness. A silicide layer having a second thickness is formed on the electrode. A sidewall spacer which is formed adjacent to the electrode has a height which is greater than the sum of the thickness of the electrode and the thickness of the silicide layer.