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公开(公告)号：US5427678A
公开(公告)日：1995-06-27
申请号：US178619
申请日：1994-01-07
申请人： Masahiro Yoshimura , Yoo S. Eul , Nobuo Ishizawa
发明人： Masahiro Yoshimura , Yoo S. Eul , Nobuo Ishizawa
CPC分类号： C25D11/02
摘要： The present invention provides a composite oxide thin film which is characterized in that said thin film is formed, by energizing a work electrode and an opposite electrode immersed in a solution containing reactive components, through the reaction between said reactive components in the solution and said work electrode. More particularly, the present invention provides a composite oxide thin film formed through an electric-chemical reaction under water thermal conditions. According to the present invention, improvement of crystallinity is promoted by the use of water thermal conditions as compared with the conventional thin film forming methods, and it is possible to obtain a uniform composite oxide thin film having an excellent crystallinity directly at a relatively low temperature. A large-area thin film can thus easily be manufactured.
摘要翻译： 本发明提供一种复合氧化物薄膜，其特征在于，所述薄膜是通过激活作用电极和浸在含有反应性成分的溶液中的相对电极，通过溶液中的所述反应性组分与所述工件 电极。 更具体地说，本发明提供了在水热条件下通过电化学反应形成的复合氧化物薄膜。 根据本发明，与常规薄膜形成方法相比，通过使用水热条件促进了结晶度的提高，并且可以在相对低的温度下直接获得具有优异结晶度的均匀的复合氧化物薄膜 。 因此可以容易地制造大面积的薄膜。
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公开(公告)号：US20090202415A1
公开(公告)日：2009-08-13
申请号：US12417228
申请日：2009-04-02
IPC分类号： C01B33/033 , B01J19/24
CPC分类号： C01B33/035
摘要： When high purity silicon is produced through a gas-phase reaction between silicon tetra-chloride and zinc in a reaction furnace, the produce silicon is obtained as block or molten state. after the reaction in which the silicon is not in contact with air and reaction temperature is maintained at melting point of the silicon or less.
摘要翻译： 当在反应炉中通过四氯化硅和锌之间的气相反应产生高纯度硅时，获得了生产硅作为块状或熔融状态。 在硅与空气不接触的反应之后，反应温度保持在硅的熔点以下。
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公开(公告)号：US07538044B2
公开(公告)日：2009-05-26
申请号：US10527801
申请日：2003-09-11
IPC分类号： H01L21/3141
CPC分类号： C01B33/035
摘要： When high purity silicon is produced through a gas-phase reaction between silicon tetra-chloride and zinc in a reaction furnace, the produce silicon is obtained as block or molten state. after the reaction in which the silicon is not in contact with air and reaction temperature is maintained at melting point of the silicon or less.
摘要翻译： 当在反应炉中通过四氯化硅和锌之间的气相反应产生高纯度硅时，获得了生产硅作为块状或熔融状态。 在硅与空气不接触的反应之后，反应温度保持在硅的熔点以下。
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公开(公告)号：US20060270199A1
公开(公告)日：2006-11-30
申请号：US10527801
申请日：2003-09-11
CPC分类号： C01B33/035
摘要： When high purity silicon is produced through a gas-phase reaction between silicon tetra-chloride and zinc in a reaction furnace, the produce silicon is obtained as block or molten state. after the reaction in which the silicon is not in contact with air and reaction temperature is maintained at melting point of the silicon or less.
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