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    Method for preparing group IV nanocrystals with chemically accessible surfaces
    2.
    发明申请
    Method for preparing group IV nanocrystals with chemically accessible surfaces 失效
    用化学可接触表面制备IV族纳米晶体的方法

    公开(公告)号：US20050070106A1

    公开(公告)日：2005-03-31

    申请号：US10900965

    申请日：2004-07-28

    申请人： Susan Kauzlarich ,  Richard Baldwin

    发明人： Susan Kauzlarich ,  Richard Baldwin

    IPC分类号： C01B33/033 ,  C30B7/00 ,  C30B29/66 ,  C30B1/00 ,  H01L21/20 ,  H01L21/36 ,  H01L21/302 ,  H01L21/461

    CPC分类号： C01B33/021 ,  B82Y30/00 ,  C01B33/033 ,  C30B7/00 ,  C30B29/06 ,  C30B29/605

    摘要： Group IV nanocrystals, such as, for example, silicon nanocrysals and germanium nanocrystals, with chemically accessible surfaces are produced in solution reactions. Group IV halides can be reduced in organic solvents such as 1,2-dimethoxyethane (glyme), with soluable reducing agents to give halide-terminated group IV nanocrystals, which can then be easily functionalized with alkyl lithium, Grignard or other reagents to synthesize group IV nanocrystals having air and moisture stable surfaces. Synthesis can occur at ambient temperature and pressure.

    摘要翻译： 在溶液反应中产生IV族纳米晶体，例如具有化学可接近表面的硅纳米颗粒和锗纳米晶体。 可以在有机溶剂如1,2-二甲氧基乙烷（甘醇二甲醚）中用可溶还原剂还原IV族卤化物，得到卤化物封端的IV族纳米晶体，然后可以用烷基锂，格利雅或其他试剂进行官能化，合成基团 IV纳米晶体具有空气和水分稳定的表面。 合成可以在环境温度和压力下进行。

    Apparatus for obtaining silicon from fluosilicic acid
    3.
    发明授权
    Apparatus for obtaining silicon from fluosilicic acid 失效
    用于从氟硅酸获得硅的设备

    公开(公告)号：US4590043A

    公开(公告)日：1986-05-20

    申请号：US453734

    申请日：1982-12-27

    申请人： Angel Sanjurjo

    发明人： Angel Sanjurjo

    IPC分类号： C01B33/02 ,  C01B33/03 ,  C01B33/033 ,  C30B11/00 ,  C30B29/06 ,  H01L21/205 ,  H01L31/04 ,  C30B15/10

    CPC分类号： C30B29/06 ,  C01B33/033 ,  C30B11/00 ,  C30B11/002 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521 ,  Y10S117/91 ,  Y10T117/1092

    摘要： Apparatus for producing low cost, high purity solar grade silicon ingots in single crystal or quasi single crystal ingot form in a substantially continuous operation in a two stage reactor starting with sodium fluosilicate and a metal more electropositive than silicon (preferably sodium) in separate compartments having easy vapor transport therebetween and thermally decomposing the sodium fluosilicate to cause formation of substantially pure silicon and a metal fluoride which may be continuously separated in the melt and silicon may be directly and continuously cast from the melt.

    摘要翻译： 用于在单晶或准单晶锭中生产低成本，高纯度太阳能级硅锭的装置，其基本上连续操作在起始于氟硅酸钠的两阶段反应器中，并且在分开的隔室中具有比硅（优选钠）更正电的金属， 容易的蒸汽输送并使硅氟硅酸钠分解，从而形成基本上纯的硅，并且可以在熔体和硅中连续分离的金属氟化物可以从熔体直接和连续铸造。

    Process and apparatus for obtaining silicon from fluosilicic acid
    4.
    发明授权
    Process and apparatus for obtaining silicon from fluosilicic acid 失效
    从氟硅酸获得硅的方法和设备

    公开(公告)号：US4529576A

    公开(公告)日：1985-07-16

    申请号：US453457

    申请日：1982-12-27

    申请人： Kenneth M. Sancier

    发明人： Kenneth M. Sancier

    IPC分类号： B01J19/00 ,  B01J19/26 ,  C01B33/033 ,  C01B33/02

    CPC分类号： C01B33/033 ,  B01J19/26 ,  B01J2219/00092 ,  B01J2219/00094 ,  B01J2219/00108 ,  B01J2219/00119 ,  B01J2219/00121 ,  B01J2219/00132 ,  B01J2219/00155 ,  B01J2219/00162 ,  B01J2219/00164

    摘要： Process for producing low cost, high purity solar grade Si wherein a reduction reaction, preferably the reduction of SiF.sub.4, by an alkali metal (liquid Na preferred) is carried out essentialy continuously by injecting of reactants in substantially stoichiometric proportions into a reaction chamber having a controlled temperature thereby to form a mist or dispersion of reactants. The reactants being supplied at such a rate and temperature that the reaction takes place far enough away from the entry region to avoid plugging of reactants at the entry region, the reaction is completed and whereby essentially all reaction product solidifies and forms a free flowing powder before reaction product hits a reaction chamber wall. Thus, the reaction product does not adhere to the reaction chamber wall or pick up impurities therefrom. Separation of reaction products is easily carried out by either a leach or melt separation process.

    摘要翻译： 用于生产低成本，高纯度太阳能级Si的方法，其中通过将基本上化学计量比的反应物注入具有碱金属的反应室中，通过碱金属（优选液体Na）进行还原反应，优选还原SiF 4的方法是连续进行的 控制温度，从而形成反应物的雾或分散体。 反应物以这样的速率和温度供应，使得反应进入远离进入区域足够远，以避免入口区域处的反应物堵塞，反应完成，并且基本上所有的反应产物固化并在之前形成自由流动的粉末 反应产物撞击反应室壁。 因此，反应产物不粘附到反应室壁或从其中吸收杂质。 反应产物的分离容易通过浸出或熔融分离过程进行。

    Production of high purity silicon by a heterogeneous arc heater reduction
    6.
    发明授权
    Production of high purity silicon by a heterogeneous arc heater reduction 失效
    通过异质电弧加热器生产高纯度硅

    公开(公告)号：US4239740A

    公开(公告)日：1980-12-16

    申请号：US42474

    申请日：1979-05-25

    申请人： Francis J. Harvey, II ,  David F. Ciliberti ,  Thomas N. Meyer ,  Maurice G. Fey

    发明人： Francis J. Harvey, II ,  David F. Ciliberti ,  Thomas N. Meyer ,  Maurice G. Fey

    IPC分类号： C01B33/033 ,  C01B33/02 ,  C01D3/00 ,  C01F11/20

    CPC分类号： C01B33/033

    摘要： A process for converting silicon intermediates to high purity silicon by an arc heater characterized by the steps of preliminarily reacting gaseous silicon intermediate, such as a silicon halide, with a metal reductant, such as sodium, to form preliminary reaction products including small solid silicon particles and droplets of salt of the metal reductant, at temperatures below the boiling point of the metal reductant, subsequently heating the reaction products to temperatures above said boiling point in an arc heater chamber to convert the reaction products to droplets of silicon to merge and form larger silicon droplets, and thereafter separating the mixture of silicon droplets and salt vapor.

    摘要翻译： 一种通过电弧加热器将硅中间体转化为高纯度硅的方法，其特征在于将气态硅中间体如卤化硅与金属还原剂如钠反应，以形成包括小固体硅颗粒的预反应产物 并且金属还原剂的盐滴在金属还原剂的沸点以下的温度下随后在电弧加热器室中将反应产物加热到高于沸点的温度，以将反应产物转化成硅滴，从而形成较大的 硅滴，然后分离硅滴和盐蒸气的混合物。