公开(公告)号：US06451108B2

公开(公告)日：2002-09-17

申请号：US09767225

申请日：2001-01-23

申请人： Keigo Hoshikawa ,  Xinming Huang ,  Tatsuo Fukami ,  Toshinori Taishi

发明人： Keigo Hoshikawa ,  Xinming Huang ,  Tatsuo Fukami ,  Toshinori Taishi

IPC分类号： C30B1520

CPC分类号： C30B29/06 ,  C30B13/34 ,  C30B15/36

摘要： A method for manufacturing a dislocation-free silicon single crystal, includes the steps of preparing a silicon seed crystal formed of a dislocation-free single crystal having a boron concentration of 1×1018 atoms/cm3 or more, preparing a silicon melt having a boron concentration which differs from that of the seed crystal by 7×1018 atoms/cm3 or less, and bringing the seed crystal into contact with the silicon melt to grow the silicon single crystal.

摘要翻译： 制造无位错硅单晶的方法包括以下步骤：制备由硼浓度为1×1018原子/ cm3以上的无位错单晶形成的硅晶种，制备具有硼浓度的硅熔体 不同于晶种的7×10 18原子/ cm 3以下，并且使晶种与硅熔体接触以生长硅单晶。