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公开(公告)号：US20110056430A1
公开(公告)日：2011-03-10
申请号：US12873617
申请日：2010-09-01
IPC分类号： C30B15/14
CPC分类号： C30B29/20 , C30B11/00 , C30B11/003 , Y10T117/1068
摘要： The equipment for growing a sapphire single crystal is capable of easily improving shape accuracy and positioning accuracy of a thermal shield which influence temperature distribution in a growth furnace. The thermal shield is provided in the growth furnace and encloses the cylindrical heater so as to form a hot zone. The thermal shield is constituted by a plurality of cylindrical sections, which are vertically stacked and whose radial positions are defined by a positioning mechanism. The cylindrical sections are composed of carbon felt.
摘要翻译： 用于生长蓝宝石单晶的设备能够容易地改善影响生长炉中的温度分布的热屏蔽的形状精度和定位精度。 热屏蔽设置在生长炉中并包围圆柱形加热器以形成热区。 热屏蔽由多个垂直堆叠的圆柱形部分构成，其径向位置由定位机构限定。 圆柱形部分由碳毡组成。
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公开(公告)号：US06451108B2
公开(公告)日：2002-09-17
申请号：US09767225
申请日：2001-01-23
IPC分类号： C30B1520
摘要： A method for manufacturing a dislocation-free silicon single crystal, includes the steps of preparing a silicon seed crystal formed of a dislocation-free single crystal having a boron concentration of 1×1018 atoms/cm3 or more, preparing a silicon melt having a boron concentration which differs from that of the seed crystal by 7×1018 atoms/cm3 or less, and bringing the seed crystal into contact with the silicon melt to grow the silicon single crystal.
摘要翻译： 制造无位错硅单晶的方法包括以下步骤：制备由硼浓度为1×1018原子/ cm3以上的无位错单晶形成的硅晶种，制备具有硼浓度的硅熔体 不同于晶种的7×10 18原子/ cm 3以下，并且使晶种与硅熔体接触以生长硅单晶。
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公开(公告)号：US5458083A
公开(公告)日：1995-10-17
申请号：US218744
申请日：1994-03-28
申请人： Tsuguo Fukuda , Keigo Hoshikawa , Hiroshi Machida
发明人： Tsuguo Fukuda , Keigo Hoshikawa , Hiroshi Machida
摘要： A method of growing a rod form of a single oxide crystal is disclosed. The method uses a slit die which is placed in a crucible with a starting melt. The melt is seeded with a seed crystal while being rotated. The resulting crystal will have the same sectional shape as the shape of the upper surface of the die.
摘要翻译： 公开了生长一种单一氧化物晶体的棒形式的方法。 该方法使用狭缝模具，其被放置在具有起始熔体的坩埚中。 在旋转的同时，用晶种接种熔体。 所得到的晶体将具有与模具的上表面的形状相同的截面形状。
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公开(公告)号：US5431124A
公开(公告)日：1995-07-11
申请号：US182574
申请日：1994-01-18
申请人： Hiroshi Machida , Tsuguo Fukuda , Keigo Hoshikawa
发明人： Hiroshi Machida , Tsuguo Fukuda , Keigo Hoshikawa
CPC分类号： C30B15/34 , C30B15/00 , C30B29/16 , Y10T117/1036
摘要： A rutile single crystal with no grain boundaries of large inclination is obtained by an EFG crystal growth process wherein a die provided with slits is incorporated in a feed melt 2 to deliver up the melt through the slits until it reaches the upper face of the die, thereby obtaining a single crystal conforming in configuration to the die by pulling growth.
摘要翻译： 通过EFG晶体生长方法获得不具有大倾斜晶界的金红石单晶，其中在进料熔体2中装有切口的模具，以将熔体通过狭缝传送直到其到达模具的上表面， 从而通过拉伸生长获得与构型相一致的单晶。
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公开(公告)号：US4863554A
公开(公告)日：1989-09-05
申请号：US17072
申请日：1987-02-20
IPC分类号： C30B15/14 , C30B27/02 , H01L21/208
CPC分类号： C30B15/14
摘要： An apparatus for pulling a single crystal by CZ method or LEC method is improved. To this end, the heater for heating the inside of the furnace is divided at least in the vicinity of the solid-liquid interface into at least two heaters. Using this apparatus, a single crystal with a decreased dislocation density can be obtained.
摘要翻译： 通过CZ法或LEC法提取单晶的装置得到改善。 为此，用于加热炉内部的加热器至少在固 - 液界面附近分成至少两个加热器。 使用该装置，可以获得具有降低的位错密度的单晶。
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公开(公告)号：US20110017124A1
公开(公告)日：2011-01-27
申请号：US12837201
申请日：2010-07-15
CPC分类号： C30B29/20 , C30B11/002 , Y10T117/1024
摘要： The method is capable of producing a sapphire single crystal without forming cracks and without using an expensive crucible. The method comprises the steps of: putting a seed crystal and a raw material in a crucible; setting the crucible in a cylindrical heater; heating the crucible; and producing temperature gradient in the cylindrical heater so as to sequentially crystallize a melt. The crucible is composed of a material having a specific linear expansion coefficient which is capable of preventing mutual stress, which is caused by a difference between a linear expansion coefficient of the crucible and that of the sapphire single crystal in a direction perpendicular to a growth axis thereof, from generating in the crucible and the sapphire single crystal, or which is capable of preventing deformation of the crucible without generating a crystal defect caused by the mutual stress in the sapphire single crystal.
摘要翻译： 该方法能够生产蓝宝石单晶而不形成裂纹，而不使用昂贵的坩埚。 该方法包括以下步骤：将晶种和原料放入坩埚中; 将坩埚放置在圆柱形加热器中; 加热坩埚; 并在圆筒形加热器中产生温度梯度，以使熔体顺序结晶。 坩埚由具有特定的线性膨胀系数的材料构成，该材料能够防止由坩埚的线性膨胀系数与蓝宝石单晶垂直于成长轴的方向的线膨胀系数之间的差异引起的相互应力 在坩埚和蓝宝石单晶中产生，或者能够防止坩埚变形而不产生由蓝宝石单晶中的相互应力引起的晶体缺陷。
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