公开(公告)号：US20090321757A1

公开(公告)日：2009-12-31

申请号：US11919915

申请日：2006-05-03

申请人： Martin Kittler ,  Manfred Reiche ,  Tzanimir Arguirov ,  Winfried Seifert

发明人： Martin Kittler ,  Manfred Reiche ,  Tzanimir Arguirov ,  Winfried Seifert

IPC分类号： H01L33/00

CPC分类号： H01L33/34 ,  H01L33/16 ,  H01S5/3224 ,  H01S5/3227

摘要： A light-emitting semiconductor component comprising a substrate which has a first interface between a first and a second silicon layer, whose lattice structures which are considered as ideal are rotated relative to each other through a twist angle about a first axis perpendicular to the substrate surface and are tilted through a tilt angle about a second axis parallel to the substrate surface, in such a way that a dislocation network is present in the region of the interface, wherein the twist angle and the tilt angle are so selected that an electroluminescence spectrum of the semiconductor component has an absolute maximum of the emitted light intensity at either 1.3 micrometers light wavelength or 1.55 micrometers light wavelength.

摘要翻译： 一种发光半导体部件，其特征在于，具有基板，该基板具有第一和第二硅层之间的第一界面，所述第一和第二硅层的晶格结构被认为是理想的，通过围绕垂直于所述基板表面的第一轴线的扭转角度相对于彼此旋转 并且以平行于衬底表面的第二轴线的倾斜角倾斜，使得在界面区域中存在位错网络，其中扭转角和倾斜角被选择为使得电致发光光谱 半导体元件具有在1.3微米光波长或1.55微米光波长处的发射光强度的绝对最大值。

公开(公告)号：US07880189B2

公开(公告)日：2011-02-01

申请号：US11919915

申请日：2006-05-03

申请人： Martin Kittler ,  Manfred Reiche ,  Tzanimir Arguirov ,  Winfried Seifert

发明人： Martin Kittler ,  Manfred Reiche ,  Tzanimir Arguirov ,  Winfried Seifert

IPC分类号： H01L33/00

CPC分类号： H01L33/34 ,  H01L33/16 ,  H01S5/3224 ,  H01S5/3227

摘要： A light-emitting semiconductor component comprising a substrate which has a first interface between a first and a second silicon layer, whose lattice structures which are considered as ideal are rotated relative to each other through a twist angle about a first axis perpendicular to the substrate surface and are tilted through a tilt angle about a second axis parallel to the substrate surface, in such a way that a dislocation network is present in the region of the interface, wherein the twist angle and the tilt angle are so selected that an electroluminescence spectrum of the semiconductor component has an absolute maximum of the emitted light intensity at either 1.3 micrometers light wavelength or 1.55 micrometers light wavelength.

摘要翻译： 一种发光半导体部件，包括基板，该基板在第一和第二硅层之间具有被认为是理想的晶格结构的第一界面，通过围绕垂直于基板表面的第一轴线的扭转角相对于彼此旋转 并且以平行于衬底表面的第二轴线的倾斜角倾斜，使得在界面区域中存在位错网络，其中扭转角和倾斜角被选择为使得电致发光光谱 半导体元件具有在1.3微米光波长或1.55微米光波长处的发射光强度的绝对最大值。