公开(公告)号：US08473872B2

公开(公告)日：2013-06-25

申请号：US13531811

申请日：2012-06-25

申请人： Ying Liu ,  Sani R. Nassif ,  Xiaokang Shi

发明人： Ying Liu ,  Sani R. Nassif ,  Xiaokang Shi

IPC分类号： G06F17/50

CPC分类号： G03F1/36

摘要： A mechanism is provided for optimizing a photolithograph mask. A given target pattern is received. An initial fictitious mask is generated from the given target pattern and an initial value of α2 is selected where the initial value of α2 is used to determine a light intensity and a wafer image. The light intensity for each pixel in the initial fictitious mask and the wafer image for each pixel in the initial fictitious mask are then determined. A determination is then made as to whether a convergence has been achieved by comparing the wafer image generated from the fictitious mask to the given target pattern. Responsive to a convergence of the wafer image generated from the fictitious mask to the given target pattern, a final mask is generated to use to transfer an image to a wafer.

公开(公告)号：US20120278769A1

公开(公告)日：2012-11-01

申请号：US13531811

申请日：2012-06-25

申请人： Ying Liu ,  Sani R. Nassif ,  Xiaokang Shi

发明人： Ying Liu ,  Sani R. Nassif ,  Xiaokang Shi

IPC分类号： G06F17/50

CPC分类号： G03F1/36

摘要： A mechanism is provided for optimizing a photolithograph mask. A given target pattern is received. An initial fictitious mask is generated from the given target pattern and an initial value of α2 is selected where the initial value of α2 is used to determine a light intensity and a wafer image. The light intensity for each pixel in the initial fictitious mask and the wafer image for each pixel in the initial fictitious mask are then determined. A determination is then made as to whether a convergence has been achieved by comparing the wafer image generated from the fictitious mask to the given target pattern. Responsive to a convergence of the wafer image generated from the fictitious mask to the given target pattern, a final mask is generated to use to transfer an image to a wafer.

公开(公告)号：US20120266114A1

公开(公告)日：2012-10-18

申请号：US13531831

申请日：2012-06-25

申请人： Ying Liu ,  Sani R. Nassif ,  Xiaokang Shi

发明人： Ying Liu ,  Sani R. Nassif ,  Xiaokang Shi

IPC分类号： G06F17/50

CPC分类号： G03F1/36

摘要： A mechanism is provided for optimizing a photolithograph mask. A given target pattern is received. An initial fictitious mask is generated from the given target pattern and an initial value of α2 is selected where the initial value of α2 is used to determine a light intensity and a wafer image. The light intensity for each pixel in the initial fictitious mask and the wafer image for each pixel in the initial fictitious mask are then determined. A determination is then made as to whether a convergence has been achieved by comparing the wafer image generated from the fictitious mask to the given target pattern. Responsive to a convergence of the wafer image generated from the fictitious mask to the given target pattern, a final mask is generated to use to transfer an image to a wafer.

公开(公告)号：US08495524B2

公开(公告)日：2013-07-23

申请号：US13531778

申请日：2012-06-25

申请人： Ying Liu ,  Sani R. Nassif ,  Xiaokang Shi

发明人： Ying Liu ,  Sani R. Nassif ,  Xiaokang Shi

IPC分类号： G06F17/50

CPC分类号： G03F1/36

摘要： A mechanism is provided for optimizing a photolithograph mask. A given target pattern is received. An initial fictitious mask is generated from the given target pattern and an initial value of α2 is selected where the initial value of α2 is used to determine a light intensity and a wafer image. The light intensity for each pixel in the initial fictitious mask and the wafer image for each pixel in the initial fictitious mask are then determined. A determination is then made as to whether a convergence has been achieved by comparing the wafer image generated from the fictitious mask to the given target pattern. Responsive to a convergence of the wafer image generated from the fictitious mask to the given target pattern, a final mask is generated to use to transfer an image to a wafer.

公开(公告)号：US08495523B2

公开(公告)日：2013-07-23

申请号：US13531754

申请日：2012-06-25

申请人： Ying Liu ,  Sani R. Nassif ,  Xiaokang Shi

发明人： Ying Liu ,  Sani R. Nassif ,  Xiaokang Shi

IPC分类号： G06F17/50

CPC分类号： G03F1/36

摘要： A mechanism is provided for optimizing a photolithograph mask. A given target pattern is received. An initial fictitious mask is generated from the given target pattern and an initial value of α2 is selected where the initial value of α2 is used to determine a light intensity and a wafer image. The light intensity for each pixel in the initial fictitious mask and the wafer image for each pixel in the initial fictitious mask are then determined. A determination is then made as to whether a convergence has been achieved by comparing the wafer image generated from the fictitious mask to the given target pattern. Responsive to a convergence of the wafer image generated from the fictitious mask to the given target pattern, a final mask is generated to use to transfer an image to a wafer.

摘要翻译： 提供了一种用于优化光刻胶掩模的机构。 收到给定的目标模式。 从给定的目标图案生成初始的虚构掩模，并且选择alpha2的初始值，其中使用α2的初始值来确定光强度和晶片图像。 然后确定初始虚拟掩模中的每个像素的光强度和初始虚构掩模中每个像素的晶片图像。 然后通过将从虚构掩模生成的晶片图像与给定的目标图案进行比较来确定是否已经实现了会聚。 响应于从虚构掩模生成的晶片图像到给定目标图案的会聚，产生用于将图像转印到晶片的最终掩模。

公开(公告)号：US20120266113A1

公开(公告)日：2012-10-18

申请号：US13531778

申请日：2012-06-25

申请人： Ying Liu ,  Sani R. Nassif ,  Xiaokang Shi

发明人： Ying Liu ,  Sani R. Nassif ,  Xiaokang Shi

IPC分类号： G06F17/50

CPC分类号： G03F1/36

摘要： A mechanism is provided for optimizing a photolithograph mask. A given target pattern is received. An initial fictitious mask is generated from the given target pattern and an initial value of α2 is selected where the initial value of α2 is used to determine a light intensity and a wafer image. The light intensity for each pixel in the initial fictitious mask and the wafer image for each pixel in the initial fictitious mask are then determined. A determination is then made as to whether a convergence has been achieved by comparing the wafer image generated from the fictitious mask to the given target pattern. Responsive to a convergence of the wafer image generated from the fictitious mask to the given target pattern, a final mask is generated to use to transfer an image to a wafer.

摘要翻译： 提供了一种用于优化光刻胶掩模的机构。 收到给定的目标模式。 从给定的目标图案生成初始虚拟掩模，并且选择初始值α2，其中使用初始值α2来确定光强度和晶片图像。 然后确定初始虚拟掩模中的每个像素的光强度和初始虚构掩模中每个像素的晶片图像。 然后通过将从虚构掩模生成的晶片图像与给定的目标图案进行比较来确定是否已经实现了会聚。 响应于从虚构掩模生成的晶片图像到给定目标图案的会聚，产生用于将图像转印到晶片的最终掩模。

公开(公告)号：US20120266112A1

公开(公告)日：2012-10-18

申请号：US13531733

申请日：2012-06-25

申请人： Ying Liu ,  Sani R. Nassif ,  Xiaokang Shi

发明人： Ying Liu ,  Sani R. Nassif ,  Xiaokang Shi

IPC分类号： G06F17/50

CPC分类号： G03F1/36

摘要： A mechanism is provided for optimizing a photolithograph mask. A given target pattern is received. An initial fictitious mask is generated from the given target pattern and an initial value of α2 is selected where the initial value of α2 is used to determine a light intensity and a wafer image. The light intensity for each pixel in the initial fictitious mask and the wafer image for each pixel in the initial fictitious mask are then determined. A determination is then made as to whether a convergence has been achieved by comparing the wafer image generated from the fictitious mask to the given target pattern. Responsive to a convergence of the wafer image generated from the fictitious mask to the given target pattern, a final mask is generated to use to transfer an image to a wafer.

公开(公告)号：US08245159B2

公开(公告)日：2012-08-14

申请号：US12536090

申请日：2009-08-05

申请人： Ying Liu ,  Sani R. Nassif ,  Xiaokang Shi

发明人： Ying Liu ,  Sani R. Nassif ,  Xiaokang Shi

IPC分类号： G06F17/50

CPC分类号： G03F1/36

摘要： A mechanism is provided for optimizing a photolithograph mask. A given target pattern is received. An initial fictitious mask is generated from the given target pattern and an initial value of α2 is selected where the initial value of α2 is used to determine a light intensity and a wafer image. The light intensity for each pixel in the initial fictitious mask and the wafer image for each pixel in the initial fictitious mask are then determined. A determination is then made as to whether a convergence has been achieved by comparing the wafer image generated from the fictitious mask to the given target pattern. Responsive to a convergence of the wafer image generated from the fictitious mask to the given target pattern, a final mask is generated to use to transfer an image to a wafer.

摘要翻译： 提供了一种用于优化光刻胶掩模的机构。 收到给定的目标模式。 从给定的目标图案生成初始虚拟掩模，并且选择初始值α2，其中使用初始值α2来确定光强度和晶片图像。 然后确定初始虚拟掩模中的每个像素的光强度和初始虚构掩模中每个像素的晶片图像。 然后通过将从虚构掩模生成的晶片图像与给定的目标图案进行比较来确定是否实现了会聚。 响应于从虚构掩模生成的晶片图像到给定目标图案的会聚，产生用于将图像转印到晶片的最终掩模。

公开(公告)号：US08458620B2

公开(公告)日：2013-06-04

申请号：US13531831

申请日：2012-06-25

申请人： Ying Liu ,  Sani R. Nassif ,  Xiaokang Shi

发明人： Ying Liu ,  Sani R. Nassif ,  Xiaokang Shi

IPC分类号： G06F17/50

CPC分类号： G03F1/36

摘要： A mechanism is provided for optimizing a photolithograph mask. A given target pattern is received. An initial fictitious mask is generated from the given target pattern and an initial value of α2 is selected where the initial value of α2 is used to determine a light intensity and a wafer image. The light intensity for each pixel in the initial fictitious mask and the wafer image for each pixel in the initial fictitious mask are then determined. A determination is then made as to whether a convergence has been achieved by comparing the wafer image generated from the fictitious mask to the given target pattern. Responsive to a convergence of the wafer image generated from the fictitious mask to the given target pattern, a final mask is generated to use to transfer an image to a wafer.

公开(公告)号：US08453074B2

公开(公告)日：2013-05-28

申请号：US13531733

申请日：2012-06-25

申请人： Ying Liu ,  Sani R. Nassif ,  Xiaokang Shi

发明人： Ying Liu ,  Sani R. Nassif ,  Xiaokang Shi

IPC分类号： G06F17/50

CPC分类号： G03F1/36

摘要： A mechanism is provided for optimizing a photolithograph mask. A given target pattern is received. An initial fictitious mask is generated from the given target pattern and an initial value of α2 is selected where the initial value of α2 is used to determine a light intensity and a wafer image. The light intensity for each pixel in the initial fictitious mask and the wafer image for each pixel in the initial fictitious mask are then determined. A determination is then made as to whether a convergence has been achieved by comparing the wafer image generated from the fictitious mask to the given target pattern. Responsive to a convergence of the wafer image generated from the fictitious mask to the given target pattern, a final mask is generated to use to transfer an image to a wafer.

摘要翻译： 提供了一种用于优化光刻胶掩模的机构。 收到给定的目标模式。 从给定的目标图案生成初始的虚构掩模，并且选择alpha2的初始值，其中使用α2的初始值来确定光强度和晶片图像。 然后确定初始虚拟掩模中的每个像素的光强度和初始虚构掩模中每个像素的晶片图像。 然后通过将从虚构掩模生成的晶片图像与给定的目标图案进行比较来确定是否已经实现了会聚。 响应于从虚构掩模生成的晶片图像到给定目标图案的会聚，产生用于将图像转印到晶片的最终掩模。