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公开(公告)号：US20210288207A1
公开(公告)日：2021-09-16
申请号：US17202023
申请日：2021-03-15
Applicant: 1366 TECHNOLOGIES INC.
Inventor： Ralf JONCZYK , Patrick MCMAHON
IPC: H01L31/18
Abstract: A method includes etching silicon using a mixture of nitric acid and hydrofluoric acid in which less than 6 mols of hydrofluoric acid is used to etch one mol of silicon. The etching may be conducted at an elevated temperature, such as a temperature of at least 70 degrees Celsius.
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