公开(公告)号：US10784343B2

公开(公告)日：2020-09-22

申请号：US15856325

申请日：2017-12-28

Applicant: ACADEMIA SINICA

Inventor： Chii Dong Chen ,  Li Chu Tsai ,  Chia Jung Chu ,  Ying Pin Wu

IPC: H01L29/06 ,  C12Q1/6825 ,  C12Q1/6874 ,  G01N27/414 ,  B82Y40/00 ,  H01L29/78 ,  G01N27/48

Abstract: The present invention discloses a Nanowire Field Effect Transistor Detection Device and the Detection Method thereof. The Nanowire Field Effect Transistor Detection Device of the present invention comprises: gate oxide, SiNW chip, surface oxide, and surface molecule layer. The circuit structure of the Nanowire Field Effect Transistor Detection Device comprises a first resistor, a second resistor, a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, an AC voltage source, and an ammeter. In addition, the present invention provides a method for attaching the probe Ni-NTA to the Nanowire Field Effect Transistor Detection Device. Furthermore, the present invention provides a method for attaching the isooctyl trimethoxysilane molecule to the Nanowire Field Effect Transistor Detection Device.