公开(公告)号：US20230335427A1

公开(公告)日：2023-10-19

申请号：US18339476

申请日：2023-06-22

Applicant: AGC Inc.

Inventor： Yuha KOBAYASHI ,  Kenji GOTO

IPC: H01L21/683 ,  C03C3/095 ,  C03C3/089 ,  C03C3/091 ,  C03C3/093 ,  C03C3/083 ,  C03C3/085 ,  C03C3/087 ,  C03C3/078 ,  C03B5/18

CPC classification number: H01L21/6835 ,  C03C3/095 ,  C03C3/089 ,  C03C3/091 ,  C03C3/093 ,  C03C3/083 ,  C03C3/085 ,  C03C3/087 ,  C03C3/078 ,  C03B5/18

Abstract: To appropriately manufacture a semiconductor device. A glass substrate is a glass substrate for manufacturing the semiconductor device. In a case in which one surface is directed downward in a vertical direction, and a first position, a second position, and a third position on the one surface on an outer side in a radial direction with respect to a center point of the glass substrate are supported by supporting members, a lowest point as a position where a height in the vertical direction is the lowest on other surface is positioned in a circular central region on an inner side in the radial direction with respect to the first position, the second position, and the third position when viewed from the vertical direction, a center of the central region is a center point of the glass substrate, and a diameter of the central region has a length of ⅓ of a diameter of the glass substrate.