公开(公告)号：US20240383803A1

公开(公告)日：2024-11-21

申请号：US18757697

申请日：2024-06-28

Applicant: AGC Inc.

Inventor： Hirofumi TOKUNAGA ,  Daisuke KOBAYASHI ,  Kazutaka ONO ,  Atsuyoshi TAKENAKA ,  Yoshitaka MAEYANAGI

IPC: C03C21/00 ,  C03C3/087 ,  C03C3/091 ,  C03C17/00 ,  C03C19/00 ,  G02F1/1335

Abstract: The present invention relates to a glass substrate including a pair of main surfaces and an end surface, and having a surface layer diffusion Sn atom concentration of 2.0×1018 atomic/cm3 or more and 1.4×1019 atomic/cm3 or less in at least one of the main surfaces, the surface layer diffusion Sn atom concentration being obtained by subtracting an Sn atom concentration of an inside of the glass substrate from an Sn atom concentration of a surface layer of the glass substrate, in which the Sn atom concentration of a surface layer of the glass substrate is defined as an Sn atom concentration at a depth of 0.1 to 0.3 μm from the main surface and the Sn atom concentration of an inside of the glass substrate is defined as an Sn atom concentration at a depth of 9.0 to 9.2 μm from the main surface.

公开(公告)号：US20210147290A1

公开(公告)日：2021-05-20

申请号：US17160468

申请日：2021-01-28

Applicant: AGC Inc.

Inventor： Hirofumi TOKUNAGA ,  Daisuke KOBAYASHI ,  Kazutaka ONO ,  Atsuyoshi TAKENAKA ,  Yoshitaka MAEYANAGI

IPC: C03C21/00 ,  C03C19/00 ,  C03C17/00 ,  C03C3/087 ,  C03C3/091 ,  G02F1/1335

Abstract: The present invention relates to a glass substrate including a pair of main surfaces and an end surface, and having a surface layer diffusion Sn atom concentration of 2.0×1018 atomic/cm3 or more and 1.4×1019 atomic/cm3 or less in at least one of the main surfaces, the surface layer diffusion Sn atom concentration being obtained by subtracting an Sn atom concentration of an inside of the glass substrate from an Sn atom concentration of a surface layer of the glass substrate, in which the Sn atom concentration of a surface layer of the glass substrate is defined as an Sn atom concentration at a depth of 0.1 to 0.3 μm from the main surface and the Sn atom concentration of an inside of the glass substrate is defined as an Sn atom concentration at a depth of 9.0 to 9.2 μm from the main surface.