公开(公告)号：US20220122871A1

公开(公告)日：2022-04-21

申请号：US17072082

申请日：2020-10-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Yuichi WADA ,  Kok Wei TAN ,  Chul Nyoung LEE ,  Siew Kit HOI ,  Xinxin WANG ,  Zheng Min Clarence CHONG ,  Yaoying ZHONG ,  Kok Seong TEO

IPC: H01L21/683 ,  C23C4/134 ,  C23C14/34 ,  H01J37/32

Abstract: Methods and apparatus for protecting parts of a process chamber from thermal cycling effects of deposited materials. In some embodiments, a method of protecting the part of the process chamber includes wet etching the part with a weak alkali or acid, cleaning the part by bead blasting, coating at least a portion of a surface of the part with a stress relief layer. The stress relief layer forms a continuous layer that is approximately 50 microns to approximately 250 microns thick and is configured to preserve a structural integrity of the part from the thermal cycling of aluminum deposited on the part. The method may also include wet cleaning of the part with a heated deionized water rinse after formation of the stress relief layer.

公开(公告)号：US20210189545A1

公开(公告)日：2021-06-24

申请号：US15930636

申请日：2020-05-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Siew Kit HOI ,  Yaoying ZHONG ,  Xinxin WANG ,  Zheng Min Clarence CHONG

IPC: C23C14/06 ,  C23C14/54 ,  C23C14/34

Abstract: Methods and apparatus for performing physical vapor deposition in a reactor chamber to form aluminum material on a substrate including: depositing a first aluminum layer atop a substrate to form a first aluminum region having a first grain size and a first temperature; and cooling the first aluminum region atop a substrate to a second temperature at a rate sufficient to increase the first grain size to a second grain size.