公开(公告)号：US20210166953A1

公开(公告)日：2021-06-03

申请号：US16939652

申请日：2020-07-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Chien-Kang HSIUNG ,  Yuichi WADA ,  Glen T. MORI

IPC: H01L21/48 ,  H01L23/367

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, the method can include depositing a first layer of metal on a first substrate; depositing a second layer of metal atop the first layer of metal; depositing a third layer of metal on a second substrate; depositing a fourth layer of metal atop the third layer of metal; and bringing the second layer of material into contact with the fourth layer of material under conditions sufficient to cause the first substrate to be bonded to the second substrate by a diffusion layer formed by portions of the first layer of metal diffusing through the second layer of metal and portions of the third layer of metal diffusing through the fourth layer of metal.

公开(公告)号：US20220122871A1

公开(公告)日：2022-04-21

申请号：US17072082

申请日：2020-10-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Yuichi WADA ,  Kok Wei TAN ,  Chul Nyoung LEE ,  Siew Kit HOI ,  Xinxin WANG ,  Zheng Min Clarence CHONG ,  Yaoying ZHONG ,  Kok Seong TEO

IPC: H01L21/683 ,  C23C4/134 ,  C23C14/34 ,  H01J37/32

Abstract: Methods and apparatus for protecting parts of a process chamber from thermal cycling effects of deposited materials. In some embodiments, a method of protecting the part of the process chamber includes wet etching the part with a weak alkali or acid, cleaning the part by bead blasting, coating at least a portion of a surface of the part with a stress relief layer. The stress relief layer forms a continuous layer that is approximately 50 microns to approximately 250 microns thick and is configured to preserve a structural integrity of the part from the thermal cycling of aluminum deposited on the part. The method may also include wet cleaning of the part with a heated deionized water rinse after formation of the stress relief layer.

公开(公告)号：US20210335582A1

公开(公告)日：2021-10-28

申请号：US16857828

申请日：2020-04-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Yueh Sheng OW ,  Yuichi WADA ,  Junqi WEI ,  Kang ZHANG ,  Ananthkrishna JUPUDI ,  Sarath BABU ,  Kok Seong TEO ,  Kok Wei TAN

IPC: H01J37/32 ,  H01L21/67

Abstract: Apparatus and methods use a unique process kit to protect a processing volume of a process chamber. The process kit includes a shield with a frame configured to be insertable into a shield and a foil liner composed of a metallic material that is attachable to the frame at specific points. The specific attachment points are spaced apart to produce an amount of flexibility based on a malleability of the metallic material. The amount of flexibility ranges from approximately 2.5 to approximately 4.5.

公开(公告)号：US20210217656A1

公开(公告)日：2021-07-15

申请号：US17217179

申请日：2021-03-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Felix DENG ,  Yueh Sheng OW ,  Tuck Foong KOH ,  Nuno Yen-Chu CHEN ,  Yuichi WADA ,  Sree Rangasai V. KESAPRAGADA ,  Clinton GOH

IPC: H01L21/762 ,  H01L21/67

Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.

公开(公告)号：US20210335581A1

公开(公告)日：2021-10-28

申请号：US16855559

申请日：2020-04-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Sarath BABU ,  Ananthkrishna JUPUDI ,  Yueh Sheng OW ,  Junqi WEI ,  Kelvin Tai Ming BOH ,  Kang ZHANG ,  Yuichi WADA

IPC: H01J37/32

Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber, includes: a top plate having a central recess disposed in an upper surface thereof; a channel extending from an outer portion of the top plate to the central recess; a plurality of holes disposed through the top plate from a bottom surface of the recess to a lower surface of the top plate; a cover plate configured to be coupled to the top plate and to form a seal along a periphery of the central recess such that the covered recess forms a plenum within the top plate; and a tubular body extending down from the lower surface of the top plate and surrounding the plurality of holes, the tubular body further configured to surround a substrate support.

公开(公告)号：US20240258076A1

公开(公告)日：2024-08-01

申请号：US18103192

申请日：2023-01-30

Applicant: Applied Materials, Inc.

Inventor： Tuck Foong KOH ,  Sarath BABU ,  Yuichi WADA

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32477 ,  H01J37/32715 ,  H01L21/6833 ,  H01J2237/0206 ,  H01J2237/2007

Abstract: Embodiments of the disclosure include a substrate support including a metal body with a substrate face, a plurality of lift pin holes formed in the body, and a dielectric coating disposed on the substrate face of the body. Each of the plurality lift pin holes includes a through hole and a chamfer face configured to mate with a lift pin sleeve. The dielectric coating includes a substrate supporting surface, a thickness, and a pattern disposed in the substrate supporting surface.

公开(公告)号：US20210233802A1

公开(公告)日：2021-07-29

申请号：US17227354

申请日：2021-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Felix DENG ,  Yueh Sheng OW ,  Tuck Foong KOH ,  Nuno Yen-Chu CHEN ,  Yuichi WADA ,  Sree Rangasai V. KESAPRAGADA ,  Clinton GOH

IPC: H01L21/762 ,  H01L21/67

Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.