公开(公告)号：US20030029475A1

公开(公告)日：2003-02-13

申请号：US10153315

申请日：2002-05-21

申请人： APPLIED MATERIALS, INC., A Delaware corporation

发明人： Zhong Qiang Hua ,  Zhengquan Tan ,  Zhuang Li ,  Kent Rossman

IPC分类号： C25F003/30 ,  C25F001/00

CPC分类号： B08B7/0035 ,  C23C16/4405 ,  Y10S438/905

摘要： A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after depositing a layer of material over a substrate disposed in the chamber. In one embodiment the process comprises transferring the substrate out of the chamber; flowing a first gas into the substrate processing chamber and forming a plasma within the chamber from the first gas in order to heat the chamber; and thereafter, extinguishing the plasma, flowing an etchant gas into a remote plasma source, forming reactive species from the etchant gas and transporting the reactive species into the substrate processing chamber to etch the unwanted deposition build-up.

摘要翻译： 一种在将材料层沉积在设置在腔室中的衬底上之后，从衬底处理室的一个或多个内表面去除不想要的沉积积累的过程。 在一个实施例中，该方法包括将衬底转移出腔室; 将第一气体流入基板处理室，并在第一气体内在室内形成等离子体，以便加热室; 然后熄灭等离子体，将蚀刻剂气体流入远程等离子体源，从蚀刻剂气体形成反应物质并将反应物质输送到衬底处理室中以蚀刻不需要的沉积物积聚。