公开(公告)号：US20040139983A1

公开(公告)日：2004-07-22

申请号：US10346836

申请日：2003-01-16

Applicant: Applied Materials, Inc.

Inventor： Annamalai Lakshmanan ,  Ju-Hyung Lee ,  Troy Kim ,  Maosheng Zhao ,  Shankar Venkataraman

IPC: C25F001/00

CPC classification number: H01J37/32862 ,  B08B7/0035 ,  C23C16/4405 ,  Y10S134/902 ,  Y10S438/905

Abstract: A method and apparatus for cleaning a processing chamber are provided. The cleaning method includes the use of a remote plasma source to generate reactive species and an in situ RF power to generate or regenerate reactive species. The reactive species are generated from a carbon and fluorine-containing gas and an oxygen source.

Abstract translation: 提供一种用于清洁处理室的方法和装置。 清洁方法包括使用远程等离子体源来产生反应物种和原位RF功率以产生或再生反应性物质。 活性物质由碳和含氟气体和氧源产生。

公开(公告)号：US20040025903A1

公开(公告)日：2004-02-12

申请号：US10217251

申请日：2002-08-09

Inventor： Bradley J. Howard

IPC: B08B006/00 ,  C25F001/00 ,  C25F003/30 ,  C25F005/00

CPC classification number: H01J37/32862 ,  B08B7/00 ,  B08B7/0035 ,  C23C16/4405

Abstract: An in-situ chamber cleaning method and apparatus used to remove adherent polymer deposits from the walls of a diode process reactor or chamber. Using this method, a high-density plasma is introduced into the reactor core and creates a reactive cleansing plasma by subsequent RF or capacitive discharge within the chamber. The cleansing plasma decomposes the polymer material into components, which may be readily removed from the chamber improving cleansing efficiency.

Abstract translation: 用于从二极管工艺反应器或室的壁去除附着的聚合物沉积物的原位室清洁方法和装置。 使用这种方法，将高密度等离子体引入反应堆芯中，并通过腔室内随后的RF或电容放电产生反应性清洁等离子体。 清洁的等离子体将聚合物材料分解成组分，其可以容易地从室中除去，提高清洁效率。

公开(公告)号：US20040011380A1

公开(公告)日：2004-01-22

申请号：US10410803

申请日：2003-04-10

Inventor： Bing Ji ,  Stephen Andrew Motika ,  Ronald Martin Pearlstein ,  Eugene Joseph Karwacki JR. ,  Dingjun Wu

IPC: C25F001/00

CPC classification number: B08B7/00 ,  B08B7/0035 ,  C23C16/4405

Abstract: A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate by reacting the substance with a reactive agent that comprises at least one member from the group consisting a halogen-containing compound, a boron-containing compound, a hydrogen-containing compound, nitrogen-containing compound, a chelating compound, a carbon-containing compound, a chlorosilane, a hydrochlorosilane, or an organochlorosilane to form a volatile product and removing the volatile product from the substrate to thereby remove the substance from the substrate.

Abstract translation: 本文公开了用于从用于蚀刻和/或清洁应用的基底中去除物质的方法。 在一个实施方案中，提供了一种通过使该物质与包含至少一种成员的物质与含卤素的化合物，硼的物质反应从物质中除去介电常数大于二氧化硅的物质的方法 含氢化合物，含氮化合物，螯合化合物，含碳化合物，氯硅烷，氢氯代硅烷或有机氯硅烷，以形成挥发性产物，并从基质中除去挥发性产物，从而除去 来自底物的物质。

公开(公告)号：US20040007248A1

公开(公告)日：2004-01-15

申请号：US10615899

申请日：2003-07-09

Inventor： Seong Soo Jang ,  Dong Goo Choi

IPC: C25F001/00

CPC classification number: B08B7/0035 ,  C23C16/4405

Abstract: Disclosed is a method for improving the reliability of an etching apparatus and a deposition apparatus. The method comprises the steps of preparing at least one of an etching apparatus and a deposition apparatus, each of the apparatuses using a chlorine series gas, and generating a plasma including at least one of hydrogen and nitrogen in one of the etching apparatus and the deposition apparatus to remove a residual remaining in a reaction unit of the apparatus, whereby a chlorine series residual absorbed on the reaction tube is effectively removed by use of hydrogen and nitrogen-based plasmas thus to stably secure the reliability of the apparatus.

Abstract translation: 公开了一种提高蚀刻装置和沉积装置的可靠性的方法。 该方法包括以下步骤：制备蚀刻装置和沉积装置中的至少一个，每个装置使用氯气气体，并且在蚀刻装置和沉积物之一中产生包括氢和氮中的至少一种的等离子体 用于除去残留在设备的反应单元中的残留物的装置，由此通过使用氢和氮基等离子体有效地除去吸收在反应管上的氯系残余物，从而稳定地确保设备的可靠性。

公开(公告)号：US20030221703A1

公开(公告)日：2003-12-04

申请号：US10449596

申请日：2003-06-02

Applicant: NEC ELECTRONICS CORPORATION

Inventor： Shizuo Oguro

IPC: C25F001/00

CPC classification number: H01L21/02052

Abstract: A method of removing Ge contamination existing on a semiconductor substrate is provided. A surface of a semiconductor substrate is oxidized to convert a germanium (Ge) contamination existing on the surface of the substrate to an oxide of Ge. Thereafter, the surface of the substrate is contacted with an aqueous solution containing fluorine (F) ions. The oxide of germanium existing on the surface of the substrate is dissolved in the solution, thereby removing the Ge contamination from the substrate. Possible performance degradation of a semiconductor device to be fabricated with the substrate having the Ge contamination is prevented.

Abstract translation: 提供了去除存在于半导体衬底上的Ge污染物的方法。 将半导体衬底的表面氧化，将存在于衬底表面上的锗（Ge）污染物转化为Ge的氧化物。 此后，使基板的表面与含氟（F）离子的水溶液接触。 存在于基板表面上的锗的氧化物溶解在溶液中，从而从基板除去Ge污染物。 可防止用具有Ge污染的基板制造的半导体器件的性能下降。

公开(公告)号：US20030200985A1

公开(公告)日：2003-10-30

申请号：US10424197

申请日：2003-04-25

Applicant: ETEC SYSTEMS, INC.

Inventor： Bart Scholte van Mast

IPC: C25F001/00 ,  C23F001/00 ,  H01L021/302 ,  B44C001/22

CPC classification number: H01L21/02046 ,  B08B7/0035 ,  H01L21/67028

Abstract: A method and apparatus for removal of volatile contaminants from substrate surfaces before the substrate enters a process chamber. Substrate cleaning is achieved by irradiating the substrate with a low-energy electron beam. The interaction of the electrons in the beam with the contaminants present on the surface of the substrate causes evaporation of low vapor pressure species which can be deposited on the surface. A cryoshield pumps the evaporated species. After evaporation and pumping, the substrate passes through a glow discharge chamber wherein the negative surface charge created by the electron beam is neutralized using positive ions. The inventive apparatus can be configured so that no separate vacuum chamber is needed to prepare the substrate.

公开(公告)号：US20030192571A1

公开(公告)日：2003-10-16

申请号：US10383607

申请日：2003-03-10

Inventor： In-Jun Yeo ,  Byoung-Moon Yoon ,  Kyung-Hyun Kim ,  Sang-Rok Hah ,  Jeong-Lim Nam ,  Hyun-Ho Jo

IPC: C25F001/00

CPC classification number: H01L21/67051 ,  B08B3/12 ,  Y10S134/902

Abstract: The apparatus for cleaning a wafer includes an energy concentration relieving member positioned at the side of the wafer. An elongated portion of a probe extends over and substantially parallel to the wafer surface. A vibrator is attached to a rear end of the probe for vibrating the probe such that the elongated portion transfers acoustic vibrational energy to the wafer and dislodges debris.

Abstract translation: 用于清洁晶片的装置包括位于晶片一侧的能量集中释放构件。 探针的细长部分在晶片表面上延伸并且基本上平行于晶片表面。 振动器附接到探头的后端，用于振动探针，使得细长部分将声振动能传递到晶片并且去除碎片。

公开(公告)号：US20030164224A1

公开(公告)日：2003-09-04

申请号：US10407525

申请日：2003-04-03

Inventor： Michael Chiu Kwan ,  Alan W. Collins ,  Jalel Hamila ,  Padmanabhan Krishnaraj ,  Zhengquan Tan

IPC: C25F001/00

CPC classification number: H01L21/67028 ,  Y10S134/902 ,  Y10S438/905

Abstract: A method and apparatus for cleaning a semiconductor wafer processing system comprising a turbomolecular pump. In one embodiment, the invention may be reduced to practice by first supplying a cleaning agent to a chamber; pumping the cleaning agent from the chamber through an the exhaust port; at least partially opening a gate valve; and drawing at least a portion of the cleaning agent through the gate valve and into the turbomolecular pump.

公开(公告)号：US20030121528A1

公开(公告)日：2003-07-03

申请号：US10358932

申请日：2003-02-05

Applicant: Intersil Americas Inc.

Inventor： Diana L. Hackenberg

IPC: C25F001/00

CPC classification number: H01L21/02052 ,  Y10S134/902

Abstract: A method for removing a slurry from a silicon wafer after chemical-polishing whereby the wafer is subjected to at least 2 or more chemical megasonic baths for a short duration of time. The pH of the first megasonic bath matches the pH of the slurry to be removed.

Abstract translation: 一种在化学抛光后从硅晶片中除去浆料的方法，由此晶片在短时间内经受至少2个以上的化学兆声波浴。 第一兆声波浴的pH与待除去的浆液的pH值相匹配。

公开(公告)号：US20030111092A1

公开(公告)日：2003-06-19

申请号：US10304583

申请日：2002-11-25

Inventor： Ismail Kashkoush ,  Richard Novak ,  Dennis Nemeth ,  Gim-Syang Chen

IPC: C25F001/00

CPC classification number: H01L21/67051 ,  B08B3/02 ,  B08B7/00 ,  B08B2203/005 ,  Y10S134/902

Abstract: A process tank and method for stripping photoresist from semiconductor wafers. In one aspect, the invention is a method for processing integrated circuits comprising: placing at least one wafer having an edge in a process tank having a lid; closing the lid; filling the process tank with a process liquid to a predetermined level below the edge of the wafer; and applying acoustical energy to the process liquid so as to form a mist of process liquid in the process tank. In another aspect the invention is a process tank having a process chamber comprising: a means to support at least one wafer in the processing chamber; means for filling the chamber with a process liquid; a lid adapted to close the chamber; a liquid level sensor adapted to stop the supply of process liquid to the chamber when the process liquid fills the chamber to a predetermined level below a wafer supported in the processing chamber; and an acoustical energy source adapted to supply acoustical energy to process liquid located in the chamber so as to create a mist of the process liquid in the processing chamber.

Abstract translation: 一种用于从半导体晶片剥离光致抗蚀剂的工艺罐和方法。 一方面，本发明是用于处理集成电路的方法，包括：将具有边缘的至少一个晶片放置在具有盖的处理槽中; 关闭盖子 用处理液将处理罐填充到晶片边缘以下的预定水平; 并向工艺液体施加声能，以便在处理罐中形成工艺液体雾。 在另一方面，本发明是一种具有处理室的处理罐，包括：用于在处理室中支撑至少一个晶片的装置; 用于用处理液体填充室的装置; 盖子，用于关闭所述腔室; 液位传感器，适于当处理液体将腔室填充到在处理室内支撑的晶片之下的预定水平时停止向腔室供应过程液体; 以及适于提供声能以处理位于所述室中的液体的声能源，以在所述处理室中产生处理液体的雾。