公开(公告)号：US20240240349A1

公开(公告)日：2024-07-18

申请号：US18549137

申请日：2021-11-05

Applicant: ART1 Inc.

Inventor： Shigenori Tanaka ,  Masahiro Akimoto

IPC: C25D11/12 ,  C25D11/02 ,  C25D11/08 ,  C25D11/10

CPC classification number: C25D11/12 ,  C25D11/024 ,  C25D11/08 ,  C25D11/10

Abstract: Problem to be Solved
To develop material by providing electronic conductivity to an anode-oxidization film while having hardness than that of hard-anodized aluminum.
Means for Solving Problem
The present invention provides an excellent material keeping an electric resistance not more than 1×10−2Ω while having hardness not less than HV 470 as a film by removing a barrier layer used for an insulation material in the anode-oxidization film, and then forming a film with good electric conductivity by further depositing metal. The material has low resistance suitable to practical use and the excellent hardness, which have not been conventionally known as an aluminum material. This material can be produced by applying four-step electrolysis.

公开(公告)号：US20240287701A1

公开(公告)日：2024-08-29

申请号：US18549101

申请日：2022-11-10

Applicant: ART1 Inc.

Inventor： Shigenori Tanaka ,  Kazuhito Nishinaka ,  Masahiro Akimoto

IPC: C25D11/18

CPC classification number: C25D11/18

Abstract: [Problem to be Solved] To develop a material of aluminum anode-oxidization layer with an antistatic performance and hardness.
[Means for Solving Problem] The present invention provides a material having the combination of antistatic, electro-magnetic shield, and electric conductive properties immediately provided to practical use which are not known conventionally by forming 10-1000 cracks having a width from 0.1-10 μm per arbitrary one end face of 1 cm2, depositing or precipitating metal in and nearby the cracks, and then forming between a substrate and a surface an electric-conductive layer not more than 103Ω.