公开(公告)号：US20230307239A1

公开(公告)日：2023-09-28

申请号：US18190542

申请日：2023-03-27

Applicant: ASM IP Holding, B.V.

Inventor： Sean T. Barry ,  Goran Bacic ,  Charles Dezelah ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Peter Gordon

IPC: H01L21/285 ,  C23C16/455

CPC classification number: H01L21/28556 ,  C23C16/45527 ,  C23C16/45553

Abstract: The current disclosure relates to vapor phase methods of depositing a metal or a semimetal-comprising materials on a substrate. In the methods, various metal or semimetal precursors may be used together with reactants that may generate hydrogen radical or amino radical to react with the metal or semimetal precursor to deposit the metal or semimetal-comprising material on the substrate. The disclosure further relates to materials and structures deposited by the disclosed methods, as well as deposition assemblies.