公开(公告)号：US20190066997A1

公开(公告)日：2019-02-28

申请号：US15690017

申请日：2017-08-29

Applicant: ASM IP Holding B.V.

Inventor： Arjen Klaver ,  Werner Knaepen ,  Lucian Jdira ,  Gido van der Star ,  Ruslan Kvetny

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/44 ,  C23C16/455

Abstract: There is provided a method and apparatus for forming a layer, by sequentially repeating a layer deposition cycle to process a substrate disposed in a reaction chamber. The deposition cycle comprising: supplying a first precursor into the reaction chamber for a first pulse period; supplying a second precursor into the reaction chamber for a second pulse period. At least one of the first and second precursors may be supplied into the reaction chamber for a pretreatment period longer than the first or second pulse period before sequentially repeating the deposition cycles.

公开(公告)号：US11830730B2

公开(公告)日：2023-11-28

申请号：US15690017

申请日：2017-08-29

Applicant: ASM IP Holding B.V.

Inventor： Arjen Klaver ,  Werner Knaepen ,  Lucian Jdira ,  Gido van der Star ,  Ruslan Kvetny

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/44 ,  C23C16/455 ,  C23C16/34

CPC classification number: H01L21/0228 ,  C23C16/345 ,  C23C16/4408 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/02211

Abstract: There is provided a method and apparatus for forming a layer, by sequentially repeating a layer deposition cycle to process a substrate disposed in a reaction chamber. The deposition cycle comprising:



supplying a first precursor into the reaction chamber for a first pulse period;
supplying a second precursor into the reaction chamber for a second pulse period. At least one of the first and second precursors may be supplied into the reaction chamber for a pretreatment period longer than the first or second pulse period before sequentially repeating the deposition cycles.