公开(公告)号：US20210035854A1

公开(公告)日：2021-02-04

申请号：US16932707

申请日：2020-07-18

Applicant: ASM IP Holding B.V.

Inventor： TaeHee Yoo ,  YoungHoon Kim ,  SeWoong Jung

IPC: H01L21/762 ,  H01L21/311 ,  H01L21/02

Abstract: Methods of forming structures that include a step of treating a layer to remove residual etchant compounds, such as fluorine, are disclosed. Exemplary methods can be used to fill features on a surface of a substrate during a device manufacturing process.

公开(公告)号：US20220301823A1

公开(公告)日：2022-09-22

申请号：US17694297

申请日：2022-03-14

Applicant: ASM IP Holding B.V.

Inventor： TaeHee Yoo ,  SeWoong Jung

IPC: H01J37/32 ,  H01L21/02

Abstract: A substrate processing method capable of suppressing void formation includes supplying a silicon precursor on a pattern structure to form a silicon source layer having a first opening; and supplying plasma on the silicon source layer to volatilize constituents other than silicon included in the silicon source layer to enlarge the first opening.

公开(公告)号：US20230030566A1

公开(公告)日：2023-02-02

申请号：US17866730

申请日：2022-07-18

Applicant: ASM IP Holding B.V.

Inventor： TaeHee Yoo ,  SeWoong Jung ,  JuHyuk Park

IPC: H01L21/02

Abstract: A substrate processing method of filling a recess without voids or seams includes least partially filling a trench with a first material on a substrate including the trench; and supplying at least one constituent element included in the first material and applying plasma to induce fluidization of the first material.