公开(公告)号：US12125669B2

公开(公告)日：2024-10-22

申请号：US18362757

申请日：2023-07-31

Applicant: ASML Netherlands B.V.

Inventor： Ning Ye ,  Jun Jiang ,  Jian Zhang ,  Yixiang Wang

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/26

CPC classification number: H01J37/28 ,  H01J37/244 ,  H01J37/265 ,  H01J2237/0047 ,  H01J2237/2817

Abstract: Apparatuses, systems, and methods for providing beams for controlling charges on a sample surface of charged particle beam system. In some embodiments, a module comprising a laser source configured to emit a beam. The beam may illuminate an area adjacent to a pixel on a wafer to indirectly heat the pixel to mitigate a cause of a direct photon-induced effect at the pixel. An electron beam tool configured to detect a defect in the pixel, wherein the defect is induced by the indirect heating of the pixel.

公开(公告)号：US12217927B2

公开(公告)日：2025-02-04

申请号：US17633556

申请日：2020-08-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Jian Zhang ,  Ning Ye ,  Zhiwen Kang ,  Yixiang Wang

IPC: H01J37/26 ,  G02B27/09 ,  H01J37/02 ,  H01J37/28

Abstract: A system and a method for manipulating a beam of an Advanced Charge Controller module in different planes in an e-beam system are provided. Some embodiments of the system include a lens system configured to manipulate a beam in the tangential plane and the sagittal plane such that the beam spot is projected onto the wafer with high luminous energy. Some embodiments of the system include a lens system comprising at least two cylindrical lens.

公开(公告)号：US11728131B2

公开(公告)日：2023-08-15

申请号：US17553357

申请日：2021-12-16

Applicant: ASML Netherlands B.V.

Inventor： Ning Ye ,  Jun Jiang ,  Jian Zhang ,  Yixiang Wang

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/26

CPC classification number: H01J37/28 ,  H01J37/244 ,  H01J37/265 ,  H01J2237/0047 ,  H01J2237/2817

Abstract: Apparatuses, systems, and methods for providing beams for controlling charges on a sample surface of charged particle beam system. In some embodiments, a module comprising a laser source configured to emit a beam. The beam may illuminate an area adjacent to a pixel on a wafer to indirectly heat the pixel to mitigate a cause of a direct photon-induced effect at the pixel. An electron beam tool configured to detect a defect in the pixel, wherein the defect is induced by the indirect heating of the pixel.

公开(公告)号：US12105036B2

公开(公告)日：2024-10-01

申请号：US17276124

申请日：2019-08-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Jian Zhang ,  Ning Ye ,  DanJing Huang ,  Bin-Da Chan

IPC: G01N23/2251 ,  G01J1/42 ,  G06T7/00

CPC classification number: G01N23/2251 ,  G01J1/4257 ,  G06T7/001 ,  G01N2223/07 ,  G01N2223/418 ,  G01N2223/507 ,  G01N2223/6116 ,  G06T2207/10016 ,  G06T2207/10144 ,  G06T2207/30108

Abstract: A system and a method for monitoring a beam in an inspection system are provided. The system includes an image sensor configured to collect a sequence of images of a beam spot of a beam formed on a surface, each image of the sequence of images having been collected at a different exposure time of the image sensor, and a controller configured to combine the sequence of images to obtain a beam profile of the beam.