公开(公告)号：US12170182B2

公开(公告)日：2024-12-17

申请号：US17366308

申请日：2021-07-02

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Zhimin Wan ,  Chi-ming Huang ,  Shao-Yu Hu

IPC: H01J37/20 ,  H01J37/147 ,  H01J37/317 ,  H01L21/265

Abstract: The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for adjusting a ribbon beam angle of an ion implantation system. An exemplary ion implantation system includes an ion source configured to generate a ribbon beam, a wafer chuck configured to hold a wafer during implantation by the ribbon beam, a dipole magnet disposed between the ion source and the wafer chuck, and a controller. The dipole magnet includes at least two coils configured to adjust a ribbon beam angle of the ribbon beam at one or more locations along a path of the ribbon beam between the ion source and the wafer held in the wafer chuck. The controller is configured to control the ion source, the wafer chuck, and the dipole magnet.