公开(公告)号：US11349414B2

公开(公告)日：2022-05-31

申请号：US17017099

申请日：2020-09-10

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Te-Min Wang ,  Yu-Ho Ni ,  Chun-Chieh Lin ,  Chien-Chung Hou ,  Cheng-Mao Chien

IPC: H02N13/00 ,  H01L21/687 ,  H01L21/67 ,  H01L21/683 ,  G01R31/28 ,  G01R27/26 ,  H05F3/02

Abstract: An apparatus and a method for monitoring the relative relationship between the wafer and the chuck is provided, especially for monitoring whether the wafer is sticky on the chuck when the wafer is de-chucked. The lift pins may be extended outside the chuck to separate the wafer and the chuck when the wafer is de-chucked. By detecting the capacitance between the de-chucked wafer and the chuck, especially by comparing the detected capacitance with the capacitance that the wafer is held by the chuck, one may determine whether the wafer is sticky on the chuck, or even whether the wafer is properly supported by the lift pins. Accordingly, an early alarm may be issued if the wafer is sticky or improperly removed. Besides, by controlling a switch electrically connected to a lift pin that contacted the wafer, the charges at the wafer may be eliminated.

公开(公告)号：US11062926B2

公开(公告)日：2021-07-13

申请号：US16593835

申请日：2019-10-04

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Chih-Chiang Wu ,  Chun-Chin Kang ,  Yu-Ho Ni ,  Chien-Ta Feng

IPC: H01L21/67 ,  H01L21/265 ,  H01L21/66 ,  H01L21/683

Abstract: Apparatus and method for monitoring wafer charges are proposed. A conductive pin, a conductive spring and a conductive line are configured in series to connect the backside surface of the wafer and the sample conductor so that the backside surface of the wafer and the surface of the sample conductor have identical charge density. Hence, by using a static electricity sensor positioned close to the surface of the sample conductor, the charges on the wafer may be monitored. Note that the charges appeared on the frontside surface of the wafer induces charges on the backside surface of the wafer. The sample conductor is a sheet conductor and properly insulated from the surrounding environment. As usual, the sample conductor and the static electricity sensor are positioned outside the chamber where the wafer is placed and processed, so as to simplify the apparatus inside the chamber and reduce the contamination risk.

公开(公告)号：US20200035526A1

公开(公告)日：2020-01-30

申请号：US16593835

申请日：2019-10-04

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Chih-Chiang WU ,  Chun-Chin KANG ,  Yu-Ho NI ,  Chien-Ta FENG

IPC: H01L21/67 ,  H01L21/265 ,  H01L21/66

Abstract: Apparatus and method for monitoring wafer charges are proposed. A conductive pin, a conductive spring and a conductive line are configured in series to connect the backside surface of the wafer and the sample conductor so that the backside surface of the wafer and the surface of the sample conductor have identical charge density. Hence, by using a static electricity sensor positioned close to the surface of the sample conductor, the charges on the wafer may be monitored. Note that the charges appeared on the frontside surface of the wafer induces charges on the backside surface of the wafer. The sample conductor is a sheet conductor and properly insulated from the surrounding environment. As usual, the sample conductor and the static electricity sensor are positioned outside the chamber where the wafer is placed and processed, so as to simplify the apparatus inside the chamber and reduce the contamination risk.

公开(公告)号：US10475678B2

公开(公告)日：2019-11-12

申请号：US15928343

申请日：2018-03-22

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Chih-Chiang Wu ,  Chun-Chin Kang ,  Yu-Ho Ni ,  Chien-Ta Feng

IPC: H01L21/67 ,  H01L21/265 ,  H01L21/66 ,  H01L21/683

Abstract: Apparatus and method for monitoring wafer charges are proposed. A conductive pin, a conductive spring and a conductive line are configured in series to connect the backside surface of the wafer and the sample conductor so that the backside surface of the wafer and the surface of the sample conductor have identical charge density. Hence, by using a static electricity sensor positioned close to the surface of the sample conductor, the charges on the wafer may be monitored. Note that the charges appeared on the frontside surface of the wafer induces charges on the backside surface of the wafer. As usual, the sample conductor is a sheet conductor and properly insulated from the surrounding environment. As usual, the sample conductor and the static electricity sensor are positioned outside the chamber where the wafer is placed and processed, so as to simplify the apparatus inside the chamber and reduce the contamination risk.

公开(公告)号：US20190197675A1

公开(公告)日：2019-06-27

申请号：US16185133

申请日：2018-11-09

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Chien-Li Chen ,  Yu-Ho Ni ,  Chien-Cheng Kuo ,  Te-min Wang

IPC: G06T7/00 ,  H01L21/68 ,  G06T7/73

CPC classification number: G06T7/001 ,  G06T7/74 ,  G06T2207/30164 ,  H01L21/681

Abstract: A method for calibrating element in a semiconductor processing device with a camera is provided. The method for calibrating element in a semiconductor processing device with a camera includes taking a first picture of a first element by a camera; providing a first actuator to move the first element an increment along a first direction; taking a second picture of the first element by the camera; and comparing the first picture and the second picture to calibrate the first element. A system for calibrating element in a semiconductor processing device with a camera is also provided.

公开(公告)号：US09431247B2

公开(公告)日：2016-08-30

申请号：US14752522

申请日：2015-06-26

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Zhimin Wan ,  Kourosh Saadatmand ,  Wilhelm P. Platow ,  Ger-Pin Lin ,  Ching-I Li ,  Rekha Padmanabhan ,  Gary N. Cai

IPC: H01L21/265 ,  H01J37/302

CPC classification number: H01L21/26586 ,  H01J37/3026 ,  H01J37/3171 ,  H01J2237/0835 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31706

Abstract: A method for an ion implantation is provided. First, a non-parallel ion beam is provided. Thereafter, a relative motion between a workpiece and the non-parallel ion beam, so as to enable each region of the workpiece to be implanted by different portions of the non-parallel ion beam successively. Particularly, when at least one three-dimensional structure is located on the upper surface of the workpiece, both the top surface and the side surface of the three-dimensional structure may be implanted properly by the non-parallel ion beam when the workpiece is moved across the non-parallel ion beam one and only one times. Herein, the non-parallel ion beam can be a divergent ion beam or a convergent ion beam (both may be viewed as the integrated divergent beam), also can be generated directly from an ion source or is modified from a parallel ion beam, a divergent ion beam or a convergent ion beam.

Abstract translation: 提供了一种用于离子注入的方法。 首先，提供非平行离子束。 此后，工件和非平行离子束之间的相对运动，以使得工件的每个区域能够被不平行离子束的不同部分连续地注入。 特别地，当至少一个三维结构位于工件的上表面上时，当工件移动时，可以通过非平行离子束适当地注入三维结构的顶表面和侧表面 跨越非平行离子束一次，仅一次。 这里，非平行离子束可以是发散离子束或会聚离子束（两者均可视为积分发散光束），也可以直接从离子源产生或者从平行离子束修饰， 发散离子束或会聚离子束。

公开(公告)号：US20150255242A1

公开(公告)日：2015-09-10

申请号：US14201747

申请日：2014-03-07

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： William DIVERGILIO ,  Stephen SAVAS ,  Susan FELCH ,  Tienyu SHENG ,  Hao CHEN

IPC: H01J37/08 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3007 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/3266 ,  H01J2237/061 ,  H01J2237/083

Abstract: A plasma-based material modification system for material modification of a work piece may include a plasma source chamber coupled to a process chamber. A support structure, configured to support the work piece, may be disposed within the process chamber. The plasma source chamber may include a first plurality of magnets, a second plurality of magnets, and a third plurality of magnets that surround a plasma generation region within the plasma source chamber. The plasma source chamber may be configured to generate a plasma having ions within the plasma generation region. The third plurality of magnets may be configured to confine a majority of electrons of the plasma having energy greater than 10 eV within the plasma generation region while allowing ions from the plasma to pass through the third plurality of magnets into the process chamber for material modification of the work piece.

Abstract translation: 用于工件的材料改性的等离子体材料改性系统可以包括耦合到处理室的等离子体源室。 构造成支撑工件的支撑结构可以设置在处理室内。 等离子体源室可以包括第一多个磁体，第二多个磁体和围绕等离子体源室中的等离子体产生区域的第三多个磁体。 等离子体源室可以被配置为产生在等离子体产生区域内具有离子的等离子体。 第三多个磁体可以被配置为在等离子体产生区域内限制具有大于10eV的能量的等离子体的大部分电子，同时允许来自等离子体的离子通过第三多个磁体进入处理室，用于材料修饰 工件。

公开(公告)号：US08993979B2

公开(公告)日：2015-03-31

申请号：US14191364

申请日：2014-02-26

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Jiong Chen

IPC: G21K1/08 ,  H01J37/32 ,  G21K1/093 ,  G21K5/04 ,  H01J37/147 ,  H01J37/317 ,  H01J37/30

CPC classification number: H01J37/32669 ,  G21K1/093 ,  G21K5/04 ,  H01J37/1471 ,  H01J37/3007 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/24542

Abstract: A beam control assembly to shape a ribbon beam of ions for ion implantation includes a first bar, second bar, first coil of windings of electrical wire, second coil of windings of electrical wire, first electrical power supply, and second electrical power supply. The first coil is disposed on the first bar. The first coil is the only coil disposed on the first bar. The second bar is disposed opposite the first bar with a gap defined between the first and second bars. The ribbon beam travels between the gap. The second coil is disposed on the second bar. The second coil is the only coil disposed on the second bar. The first electrical power supply is connected to the first coil without being electrically connected to any other coil. The second electrical power supply is connected to the second coil without being electrically connected to any other coil.

Abstract translation: 用于成形用于离子注入的离子束带的束控制组件包括第一杆，第二杆，电线的绕组的第一线圈，电线的第二绕组线圈，第一电源和第二电源。 第一线圈设置在第一杆上。 第一线圈是设置在第一条上的唯一线圈。 第二杆与第一杆相对地设置，在第一和第二杆之间限定间隙。 带状光束在间隙之间传播。 第二线圈设置在第二杆上。 第二线圈是设置在第二杆上的唯一线圈。 第一电源连接到第一线圈而不与任何其它线圈电连接。 第二电源连接到第二线圈而不与任何其它线圈电连接。

公开(公告)号：US20150031181A1

公开(公告)日：2015-01-29

申请号：US14195712

申请日：2014-03-03

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Daniel TANG ,  Tzu-Shih YEN

IPC: H01L29/66 ,  H01L29/51 ,  H01L29/165 ,  H01L21/3105 ,  H01L21/02 ,  H01L29/78 ,  H01L21/306

CPC classification number: H01L29/66795 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/30604 ,  H01L21/31053 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/517 ,  H01L29/66803 ,  H01L29/7848 ,  H01L29/785

Abstract: A finFET is formed having a fin with a source region, a drain region, and a channel region between the source and drain regions. The fin is etched on a semiconductor wafer. A gate stack is formed having an insulating layer in direct contact with the channel region and a conductive gate material in direct contact with the insulating layer. The source and drain regions are etched leaving the channel region of the fin. Epitaxial semiconductor is grown on the sides of the channel region that were adjacent the source and drain regions to form a source epitaxy region and a drain epitaxy region. The source and drain epitaxy regions are doped in-situ while growing the epitaxial semiconductor.

Abstract translation: 形成具有在源极区和漏极区之间具有源极区，漏极区和沟道区的鳍的finFET。 翅片在半导体晶片上蚀刻。 形成具有与沟道区域直接接触的绝缘层和与绝缘层直接接触的导电栅极材料的栅极堆叠。 蚀刻源极和漏极区域，离开鳍片的沟道区域。 在与源极和漏极区相邻的沟道区的侧面上生长外延半导体，以形成源外延区和漏极外延区。 源极和漏极外延区域在生长外延半导体的同时原位掺杂。

公开(公告)号：US08673753B1

公开(公告)日：2014-03-18

申请号：US13692815

申请日：2012-12-03

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Zhimin Wan

IPC: H01L21/425

CPC classification number: H01J37/3171 ,  H01J37/302 ,  H01J2237/047 ,  H01J2237/30472 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/66803

Abstract: In a multi-energy ion implantation process, an ion implanting system having an ion source, an extraction assembly, and an electrode assembly is used to implant ions into a target. An ion beam having a first energy may be generated using the ion source and the extraction assembly. A first voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a second energy, and implant ions into the target at the second energy. A second voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a third energy, and implants ions into the target at the third energy. The third energy may be different from the second energy.

Abstract translation: 在多能离子注入工艺中，使用具有离子源，提取组件和电极组件的离子注入系统将离子注入到靶中。 可以使用离子源和提取组件产生具有第一能量的离子束。 可以跨电极组件施加第一电压。 离子束可以以第一能量进入电极组件，以第二能量离开电极组件，并以第二能量将离子注入到靶中。 可以在电极组件上施加第二电压。 离子束可以以第一能量进入电极组件，以第三能量离开电极组件，并以第三能量将离子注入靶中。 第三能量可能与第二能量不同。