公开(公告)号：US20200273823A1

公开(公告)日：2020-08-27

申请号：US16287962

申请日：2019-02-27

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hsiang Chi CHEN ,  Cheng-Nan LIN

IPC: H01L23/66 ,  H01L23/498 ,  H01L23/00 ,  H01L21/48 ,  H01L21/78 ,  H01Q1/22

Abstract: A semiconductor device package includes a first substrate, a second substrate, an electrical contact and a support element. The first substrate has a first surface. The second substrate has a first surface facing the first surface of the first substrate. The electrical contact is disposed between the first substrate and the second substrate. The support element is disposed between the first substrate and the second substrate. The support element includes a thermosetting material.