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公开(公告)号：US20250038106A1
公开(公告)日：2025-01-30
申请号：US18227896
申请日：2023-07-28
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor： Chun-Wei CHIANG , Yung-Sheng LIN , I-Ting LIN , Ping-Hung HSIEH , Chih-Yuan HSU
IPC: H01L23/528 , H01L21/768 , H01L23/498 , H01L23/522
Abstract: A bond structure is provided. The bond structure includes a seed layer and a conductive structure. The conductive structure includes a via portion over the seed layer and a plurality of wires protruding from the via portion.
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